Inventor
HUANG TSAI-YU
TW33 patents
⚠️ This page may combine multiple inventors who share the name “HUANG TSAI-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS11901189B2Feb 13, 2024
Ambient controlled two-step thermal treatment for spin-on coating layer planarization
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12406938B2Sep 2, 2025
Methods of forming alignment structure with trenches for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094757B2Sep 17, 2024
Method for manufacturing semiconductor device with semiconductor capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11688625B2Jun 27, 2023
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11670551B2Jun 6, 2023
Interface trap charge density reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11563110B2Jan 24, 2023
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11842933B2Dec 12, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12414338B2Sep 9, 2025
Nanostructure FET and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12087592B2Sep 10, 2024
Ambient controlled two-step thermal treatment for spin-on coating layer planarization
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US11996317B2May 28, 2024
Methods for forming isolation regions by depositing and oxidizing a silicon liner
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12400910B2Aug 26, 2025
Method for forming semiconductor device with monoclinic crystalline metal oxide capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
MICRON TECHNOLOGY INC
6 patentsUS8748283B2Jun 10, 2014
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC3 citations62
US9209013B2Dec 8, 2015
Constructions comprising thermally conductive stacks containing rutile-type titanium oxide
MICRON TECHNOLOGY INC1 citations61
US8927441B2Jan 6, 2015
Methods of forming rutile titanium dioxide
MICRON TECHNOLOGY INC1 citations52
US10008381B2Jun 26, 2018
Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide
MICRON TECHNOLOGY INC0 citations51
US9159731B2Oct 13, 2015
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC0 citations51
US8936991B2Jan 20, 2015
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC0 citations51
HUANG TSAI-YU
5 patentsUS8866281B2Oct 21, 2014
Three-dimensional integrated circuits and fabrication thereof
HUANG TSAI-YU9 citations83
US8564095B2Oct 22, 2013
Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
HUANG TSAI-YU10 citations83
US8420208B2Apr 16, 2013
High-k dielectric material and methods of forming the high-k dielectric material
HUANG TSAI-YU7 citations82
US9030015B2May 12, 2015
Three dimensional stacked structure for chips
HUANG TSAI-YU2 citations62
US8609553B2Dec 17, 2013
Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures
HUANG TSAI-YU2 citations62
UNITED MICROELECTRONICS CORP
4 patentsUS9704816B1Jul 11, 2017
Active region structure and forming method thereof
UNITED MICROELECTRONICS CORP14 citations84
US10698323B2Jun 30, 2020
Test key layout and method of monitoring pattern misalignments using test keys
UNITED MICROELECTRONICS CORP2 citations73
US10770159B2Sep 8, 2020
Antifuse device and method of operating the same
UNITED MICROELECTRONICS CORP6 citations72
US10141035B1Nov 27, 2018
Memory cell with a read selection transistor and a program selection transistor
UNITED MICROELECTRONICS CORP6 citations72
NANYA TECHNOLOGY CORP
3 patentsUS6720219B2Apr 13, 2004
Split gate flash memory and formation method thereof
NANYA TECHNOLOGY CORP22 citations92
US6888193B2May 3, 2005
Split gate flash memory and formation method thereof
NANYA TECHNOLOGY CORP5 citations74
US6852637B2Feb 8, 2005
Method of etching a mask layer and a protecting layer for metal contact windows
NANYA TECHNOLOGY CORP0 citations45