Inventor
HSIEH CHUN-I
US18 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHUN-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
6 patentsUS9070871B2Jun 30, 2015
Method for fabricating magnetoresistive random access memory element
NANYA TECHNOLOGY CORP0 citations51
US8999733B2Apr 7, 2015
Method of forming RRAM structure
NANYA TECHNOLOGY CORP1 citations51
US8916392B2Dec 23, 2014
Magnetoresistive random access memory element and fabrication method thereof
NANYA TECHNOLOGY CORP0 citations51
US7943917B2May 17, 2011
Non-volatile memory cell and fabrication method thereof
NANYA TECHNOLOGY CORP0 citations51
US9153640B2Oct 6, 2015
Process for forming a capacitor structure with rutile titanium oxide dielectric film
NANYA TECHNOLOGY CORP0 citations49
US9202860B2Dec 1, 2015
Method for fabricating capacitor having rutile titanium oxide dielectric film
NANYA TECHNOLOGY CORP0 citations41
HSIEH CHUN-I
5 patentsUS8901527B2Dec 2, 2014
Resistive random access memory structure with tri-layer resistive stack
HSIEH CHUN-I4 citations71
US8487290B2Jul 16, 2013
RRAM with improved resistance transformation characteristic and method of making the same
HSIEH CHUN-I2 citations59
US8535954B2Sep 17, 2013
Magnetoresistive random access memory element and fabrication method thereof
HSIEH CHUN-I0 citations50
US8149614B2Apr 3, 2012
Magnetoresistive random access memory element and fabrication method thereof
HSIEH CHUN-I0 citations50
US8089060B2Jan 3, 2012
Non-volatile memory cell and fabrication method thereof
HSIEH CHUN-I1 citations47
MICRON TECHNOLOGY INC
3 patentsUS8748283B2Jun 10, 2014
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC3 citations62
US9159731B2Oct 13, 2015
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC0 citations51
US8936991B2Jan 20, 2015
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC0 citations51