Inventor

WAHL JEREMY A

US15 patents

⚠️ This page may combine multiple inventors who share the name “WAHL JEREMY A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

13 patents

US8691640B1Apr 8, 2014

Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant material

GLOBALFOUNDRIES INC33 citations93

US9660075B2May 23, 2017

Integrated circuits with dual silicide contacts and methods for fabricating same

GLOBALFOUNDRIES INC5 citations84

US8853019B1Oct 7, 2014

Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process

GLOBALFOUNDRIES INC7 citations83

US9634143B1Apr 25, 2017

Methods of forming FinFET devices with substantially undoped channel regions

GLOBALFOUNDRIES INC11 citations81

US9293462B2Mar 22, 2016

Integrated circuits with dual silicide contacts and methods for fabricating same

GLOBALFOUNDRIES INC3 citations73

US9196694B2Nov 24, 2015

Integrated circuits with dual silicide contacts and methods for fabricating same

GLOBALFOUNDRIES INC5 citations73

US10707119B1Jul 7, 2020

Interconnect structures with airgaps and dielectric-capped interconnects

GLOBALFOUNDRIES INC3 citations72

US10049944B2Aug 14, 2018

Method of manufacturing selective nanostructures into finFET process flow

GLOBALFOUNDRIES INC4 citations72

US8906802B2Dec 9, 2014

Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process

GLOBALFOUNDRIES INC5 citations72

US9177805B2Nov 3, 2015

Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same

GLOBALFOUNDRIES INC3 citations62

US8963255B2Feb 24, 2015

WAHL JEREMY A

2 patents

US8759904B2Jun 24, 2014

Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrate

WAHL JEREMY A10 citations81

US8722482B2May 13, 2014

Strained silicon carbide channel for electron mobility of NMOS

WAHL JEREMY A2 citations59

WAHL JEREMY A

GLOBALFOUNDRIES INC

Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant material

Integrated circuits with dual silicide contacts and methods for fabricating same

Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process

Methods of forming FinFET devices with substantially undoped channel regions

Integrated circuits with dual silicide contacts and methods for fabricating same

Integrated circuits with dual silicide contacts and methods for fabricating same

Interconnect structures with airgaps and dielectric-capped interconnects

Method of manufacturing selective nanostructures into finFET process flow

Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process

Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same

Strained silicon carbide channel for electron mobility of NMOS

Methods of trimming nanowire structures

Methods of forming a masking layer for patterning underlying structures

WAHL JEREMY A

Electronic device having plural FIN-FETs with different FIN heights and planar FETs on the same substrate

Strained silicon carbide channel for electron mobility of NMOS