Inventor
AN XIA
CN14 patents
⚠️ This page may combine multiple inventors who share the name “AN XIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HUANG RU
8 patentsUS8865543B2Oct 21, 2014
Ge-based NMOS device and method for fabricating the same
HUANG RU4 citations73
US8673722B2Mar 18, 2014
Strained channel field effect transistor and the method for fabricating the same
HUANG RU6 citations70
US9086448B2Jul 21, 2015
Method for predicting reliable lifetime of SOI mosfet device
HUANG RU2 citations51
US8632691B2Jan 21, 2014
Interface treatment method for germanium-based device
HUANG RU1 citations51
US8450155B2May 28, 2013
Method for introducing channel stress and field effect transistor fabricated by the same
HUANG RU1 citations51
US8722312B2May 13, 2014
Method for fabricating semiconductor nano circular ring
HUANG RU0 citations48
US8877594B2Nov 4, 2014
CMOS device for reducing radiation-induced charge collection and method for fabricating the same
HUANG RU0 citations41
US8652929B2Feb 18, 2014
CMOS device for reducing charge sharing effect and fabrication method thereof
HUANG RU0 citations41
UNIV BEIJING
4 patentsUS9508852B2Nov 29, 2016
Radiation-hardened-by-design (RHBD) multi-gate device
UNIV BEIJING3 citations68
US9484208B2Nov 1, 2016
Preparation method of a germanium-based schottky junction
UNIV BEIJING0 citations49
US9312126B2Apr 12, 2016
Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate
UNIV BEIJING0 citations49
US11525857B2Dec 13, 2022
Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof
UNIV BEIJING0 citations43