Inventor
LIN XIN
US107 patents
⚠️ This page may combine multiple inventors who share the name “LIN XIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
18 patentsUS6787858B2Sep 7, 2004
Carrier injection protection structure
FREESCALE SEMICONDUCTOR INC25 citations92
US9761707B1Sep 12, 2017
Laterally diffused MOSFET with isolation region
FREESCALE SEMICONDUCTOR INC13 citations84
US9614074B1Apr 4, 2017
Partial, self-biased isolation in semiconductor devices
FREESCALE SEMICONDUCTOR INC13 citations84
US9590097B2Mar 7, 2017
Semiconductor devices and related fabrication methods
FREESCALE SEMICONDUCTOR INC7 citations84
US9543454B1Jan 10, 2017
Diodes with multiple junctions
FREESCALE SEMICONDUCTOR INC6 citations84
US9508845B1Nov 29, 2016
LDMOS device with high-potential-biased isolation ring
FREESCALE SEMICONDUCTOR INC14 citations84
US8344443B2Jan 1, 2013
Single poly NVM devices and arrays
FREESCALE SEMICONDUCTOR INC13 citations84
US7915704B2Mar 29, 2011
Schottky diode
FREESCALE SEMICONDUCTOR INC8 citations84
US9871135B2Jan 16, 2018
Semiconductor device and method of making
FREESCALE SEMICONDUCTOR INC5 citations73
US9728600B2Aug 8, 2017
Partially biased isolation in semiconductor devices
FREESCALE SEMICONDUCTOR INC5 citations73
US9680011B2Jun 13, 2017
Self-adjusted isolation bias in semiconductor devices
FREESCALE SEMICONDUCTOR INC5 citations73
US7211477B2May 1, 2007
High voltage field effect device and method
FREESCALE SEMICONDUCTOR INC6 citations73
US8946862B2Feb 3, 2015
Methods for forming bipolar transistors
FREESCALE SEMICONDUCTOR INC2 citations63
US8384193B2Feb 26, 2013
Bipolar transistor with two different emitter portions having same type dopant of different concentrations for improved gain
FREESCALE SEMICONDUCTOR INC3 citations63
US7972913B2Jul 5, 2011
Method for forming a Schottky diode
FREESCALE SEMICONDUCTOR INC4 citations63
US7910441B2Mar 22, 2011
Multi-gate semiconductor device and method for forming the same
FREESCALE SEMICONDUCTOR INC5 citations63
US7927955B2Apr 19, 2011
Adjustable bipolar transistors formed using a CMOS process
FREESCALE SEMICONDUCTOR INC2 citations62
US7301187B2Nov 27, 2007
High voltage field effect device and method
FREESCALE SEMICONDUCTOR INC4 citations60
YANG HONGNING
9 patentsUS9306060B1Apr 5, 2016
Semiconductor devices and related fabrication methods
YANG HONGNING19 citations92
US9490322B2Nov 8, 2016
Semiconductor device with enhanced 3D resurf
YANG HONGNING5 citations84
US9136323B2Sep 15, 2015
Drain-end drift diminution in semiconductor devices
YANG HONGNING6 citations84
US8853780B2Oct 7, 2014
Semiconductor device with drain-end drift diminution
YANG HONGNING7 citations84
US8575692B2Nov 5, 2013
Near zero channel length field drift LDMOS
YANG HONGNING14 citations84
US9165918B1Oct 20, 2015
Composite semiconductor device with multiple threshold voltages
YANG HONGNING17 citations82
US9543379B2Jan 10, 2017
Semiconductor device with peripheral breakdown protection
YANG HONGNING3 citations73
US9105657B2Aug 11, 2015
Methods for producing near zero channel length field drift LDMOS
YANG HONGNING3 citations63
US8227861B2Jul 24, 2012
Multi-gate semiconductor devices
YANG HONGNING4 citations60
NXP USA INC
7 patentsUS9905687B1Feb 27, 2018
Semiconductor device and method of making
NXP USA INC21 citations94
US9941350B1Apr 10, 2018
Semiconductor device isolation via depleted coupling layer
NXP USA INC13 citations84
US9831338B1Nov 28, 2017
Alternating source region arrangement
NXP USA INC8 citations84
US10944001B1Mar 9, 2021
Deep trench and junction hybrid isolation
NXP USA INC5 citations73
US10297676B2May 21, 2019
Partially biased isolation in semiconductor device
NXP USA INC4 citations73
US10177252B2Jan 8, 2019
Semiconductor device isolation with RESURF layer arrangement
NXP USA INC2 citations73
US11127856B2Sep 21, 2021
LDMOS with diode coupled isolation ring
NXP USA INC0 citations63
LIN XIN
6 patentsUS8669640B2Mar 11, 2014
Bipolar transistor
LIN XIN12 citations84
US8198703B2Jun 12, 2012
Zener diode with reduced substrate current
LIN XIN19 citations84
US8847358B2Sep 30, 2014
Bipolar transistor
LIN XIN4 citations73
US8212292B2Jul 3, 2012
High gain tunable bipolar transistor
LIN XIN5 citations70
US9093567B2Jul 28, 2015
Diodes with multiple junctions and fabrication methods therefor
LIN XIN3 citations63
US8946041B2Feb 3, 2015
Methods for forming high gain tunable bipolar transistors
LIN XIN3 citations63
PENN STATE RES FOUND
2 patentsUS6531193B2Mar 11, 2003
Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
PENN STATE RES FOUND586 citations99
US5945866AAug 31, 1999
Method and system for the reduction of off-state current in field effect transistors
PENN STATE RES FOUND58 citations94
CHEN WEIZE
2 patentsNXP BV
2 patentsEMC CORP
1 patentUNIV WUHAN SCIENCE & TECH
1 patentMOTOROLA INC
1 patentUNIV QINGDAO TECHNOLOGY
1 patentShowing the top 50 of 107 patents by PatentIndex Score.