Inventor
GUISAN SANTIAGO SERRANO
US13 patents
⚠️ This page may combine multiple inventors who share the name “GUISAN SANTIAGO SERRANO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS11609296B2Mar 21, 2023
Method for measuring saturation magnetization of magnetic films and multilayer stacks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11397226B2Jul 26, 2022
Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11237240B2Feb 1, 2022
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11092661B2Aug 17, 2021
Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10788561B2Sep 29, 2020
Method for measuring saturation magnetization of magnetic films and multilayer stacks
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10754000B2Aug 25, 2020
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10401464B2Sep 3, 2019
Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
HEADWAY TECH INC
5 patentsUS11264560B2Mar 1, 2022
Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
HEADWAY TECH INC3 citations72
US10950782B2Mar 16, 2021
Nitride diffusion barrier structure for spintronic applications
HEADWAY TECH INC4 citations72
US12550623B2Feb 10, 2026
Nitride diffusion barrier structure for spintronic applications
HEADWAY TECH INC0 citations62
US11683994B2Jun 20, 2023
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
HEADWAY TECH INC0 citations62
US11264566B2Mar 1, 2022
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
HEADWAY TECH INC1 citations62