Inventor
LU BO-CYUAN
TW35 patents
Patents
35 patentsUS10504990B2Dec 10, 2019
Isolation features and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10037923B1Jul 31, 2018
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11605555B2Mar 14, 2023
Trench filling through reflowing filling material
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797050B2Oct 6, 2020
Fin field effect transistor (finFET) device structure with capping layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10483168B2Nov 19, 2019
Low-k gate spacer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10475788B2Nov 12, 2019
Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11239309B2Feb 1, 2022
Isolation features and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11195717B2Dec 7, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10734227B2Aug 4, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12520553B2Jan 6, 2026
Forming seams with desirable dimensions in isolation regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12451390B2Oct 21, 2025
Trench filling through reflowing filling material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12315759B2May 27, 2025
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218241B2Feb 4, 2025
Semiconductor device structure with etch stop layer for reducing RC delay
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119268B2Oct 15, 2024
Multi-layered insulating film stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087775B2Sep 10, 2024
Gate structures in transistor devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862508B2Jan 2, 2024
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11823955B2Nov 21, 2023
Multi-layered insulating film stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335603B2May 17, 2022
Multi-layered insulating film stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11316047B2Apr 26, 2022
Structure and formation method of semiconductor device with monoatomic etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264383B2Mar 1, 2022
Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133229B2Sep 28, 2021
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10861959B2Dec 8, 2020
Deposition selectivity enhancement and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10505021B2Dec 10, 2019
FinFet device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10355111B2Jul 16, 2019
Deposition selectivity enhancement and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11843028B2Dec 12, 2023
Isolation features and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12557364B2Feb 17, 2026
Semiconductor device with gate isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations54
US10879377B2Dec 29, 2020
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854521B2Dec 1, 2020
Low-k gate spacer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840357B2Nov 17, 2020
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535569B2Jan 14, 2020
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510612B2Dec 17, 2019
Low-K gate spacer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10468529B2Nov 5, 2019
Structure and formation method of semiconductor device structure with etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10211318B2Feb 19, 2019
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11955370B2Apr 9, 2024
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11444173B2Sep 13, 2022
Semiconductor device structure with salicide layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51