Inventor
LEE KIL-HO
KR36 patents
⚠️ This page may combine multiple inventors who share the name “LEE KIL-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS11532782B2Dec 20, 2022
Semiconductor devices including spin-orbit torque line and contact plug
SAMSUNG ELECTRONICS CO LTD2 citations73
US10651236B2May 12, 2020
Semiconductor device including variable resistance memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10319784B2Jun 11, 2019
Semiconductor device including variable resistance memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11158671B2Oct 26, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US11050016B2Jun 29, 2021
Semiconductor devices including spin-orbit torque line and contact plug
SAMSUNG ELECTRONICS CO LTD0 citations62
US12080941B2Sep 3, 2024
Signal transferring device and multiplexer using magnetic thin film structures
SAMSUNG ELECTRONICS CO LTD0 citations59
US9754817B2Sep 5, 2017
Semiconductor structures having an insulative island structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US12213322B2Jan 28, 2025
Semiconductor memory device comprising magnetic tunnel junctions
SAMSUNG ELECTRONICS CO LTD0 citations51
US12148784B2Nov 19, 2024
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations51
US12538496B2Jan 27, 2026
Nonvolatile memory devices having magnetic tunnel junction memory cells therein
SAMSUNG ELECTRONICS CO LTD0 citations47
US8993439B2Mar 31, 2015
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations40
HYUNDAI ELECTRONICS IND
9 patentsUS5898007AApr 27, 1999
Method for forming wells of a semiconductor device
HYUNDAI ELECTRONICS IND46 citations92
US5773337AJun 30, 1998
Method for forming ultra-shallow junction of semiconductor device
HYUNDAI ELECTRONICS IND21 citations92
US5872047AFeb 16, 1999
Method for forming shallow junction of a semiconductor device
HYUNDAI ELECTRONICS IND17 citations84
US5683920ANov 4, 1997
Method for fabricating semiconductor devices
HYUNDAI ELECTRONICS IND18 citations84
US6329237B1Dec 11, 2001
Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma
HYUNDAI ELECTRONICS IND8 citations74
US6077734AJun 20, 2000
Method of fabricating semiconductor device with extremely shallow junction
HYUNDAI ELECTRONICS IND7 citations74
US5677213AOct 14, 1997
Method for forming a semiconductor device having a shallow junction and a low sheet resistance
HYUNDAI ELECTRONICS IND17 citations74
US5668020ASep 16, 1997
Method for forming impurity junction regions of semiconductor device
HYUNDAI ELECTRONICS IND6 citations63
US5846887ADec 8, 1998
Method for removing defects by ion implantation using medium temperature oxide layer
HYUNDAI ELECTRONICS IND1 citations52
INFINEON TECHNOLOGIES AG
4 patentsUS6537885B1Mar 25, 2003
Transistor and method of manufacturing a transistor having a shallow junction formation using a two step EPI layer
INFINEON TECHNOLOGIES AG90 citations97
US7405482B2Jul 29, 2008
High-k dielectric film, method of forming the same and related semiconductor device
INFINEON TECHNOLOGIES AG4 citations74
US7923336B2Apr 12, 2011
High-k dielectric film, method of forming the same and related semiconductor device
INFINEON TECHNOLOGIES AG3 citations63
US7655099B2Feb 2, 2010
High-k dielectric film, method of forming the same and related semiconductor device
INFINEON TECHNOLOGIES AG3 citations63