Inventor

EIMORI TAKAHISA

JP37 patents

⚠️ This page may combine multiple inventors who share the name “EIMORI TAKAHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EIMORI TAKAHISA

MITSUBISHI ELECTRIC CORP

Field effect transistor with a shaped gate electrode

Field effect transistor with T-shaped gate electrode and manufacturing method therefor

Semiconductor device and manufacturing method thereof

Content addressable memory device

Field effect transistor substantially coplanar surface structure

Semiconductor device having SOI structure and manufacturing method therefor

Semiconductor device and method of fabricating the same

Method for forming MOS device having field shield isolation

Dynamic semiconductor memory device on SOI substrate

Semiconductor memory device

Method of making a field effect transistor with a T shaped polysilicon gate electrode

Semiconductor device

Semiconductor device having field shield element isolating structure and method of manufacturing the same

Semiconductor memory device

Field shield isolation structure for semiconductor memory device and method for manufacturing the same

Ldd mosfet with particularly shaped gate electrode immune to hot electron effect

Cmos semiconductor device with an element isolating field shield

Field effect transistor with T-shaped gate electrode

Field effect transistor with a shaped gate electrode

Field effect transistor having substantially coplanar surface structure and a manufacturing method therefor

Semiconductor device having field shield isolation

Semiconductor device and manufacturing process thereof

Semiconductor device having self-aligned contacts

Semiconductor memory device

Field effect transistor with a shaped gate electrode

Stacked capacitor type semiconductor memory device and manufacturing method thereof

Stacked capacitor type semiconductor memory device and manufacturing method thereof

Complementary semiconductor device having improved device isolating region

Method of manufacturing stacked capacitor type semiconductor memory device

Complementary semiconductor device having improved device isolating region

Thin-film transistor having a buried impurity region and method of fabricating the same

Transfer mark structure for multi-layer interconnecting and method for the manufacture thereof

Semiconductor device and manufacturing process thereof

MITSUBISHI DENKI KABUSHIKI KAS

Stacked capacitor for semiconductor memory device

MISE NOBUYUKI

CMOS semiconductor device and method for manufacturing the same

RENESAS TECH CORP

Semiconductor device with multiple layer insulating film

EIMORI TAKAHISA

Method of manufacturing semiconductor device and semiconductor device