Inventor
IRIKAWA MICHINORI
JP20 patents
Patents
20 patentsUS5920079AJul 6, 1999
Semiconductive light-emitting device having strained MQW with AlGaInAs barriers
FURUKAWA ELECTRIC CO LTD25 citations92
US5739543AApr 14, 1998
Optical semiconductive device with inplanar compressive strain
FURUKAWA ELECTRIC CO LTD21 citations92
US5583878ADec 10, 1996
Semiconductor optical device
FURUKAWA ELECTRIC CO LTD48 citations92
US5572043ANov 5, 1996
Schottky junction device having a Schottky junction of a semiconductor and a metal
FURUKAWA ELECTRIC CO LTD39 citations92
US5521935AMay 28, 1996
Strained superlattice light emitting device
FURUKAWA ELECTRIC CO LTD36 citations92
US5319661AJun 7, 1994
Semiconductor double heterostructure laser device with InP current blocking layer
FURUKAWA ELECTRIC CO LTD23 citations92
US5214662AMay 25, 1993
Semiconductor optical devices with pn current blocking layers of wide-band gap materials
FURUKAWA ELECTRIC CO LTD20 citations82
US5470786ANov 28, 1995
Semiconductor laser device
FURUKAWA ELECTRIC CO LTD14 citations74
US5251224AOct 5, 1993
Quantum barrier semiconductor optical device
FURUKAWA ELECTRIC CO LTD8 citations74
US5991473ANov 23, 1999
Waveguide type semiconductor photodetector
FURUKAWA ELECTRIC CO LTD7 citations73
US5926585AJul 20, 1999
Waveguide type light receiving element
FURUKAWA ELECTRIC CO LTD10 citations73
US5789765AAug 4, 1998
Photo diode providing high-linearity signal current in response to light receiving signal
FURUKAWA ELECTRIC CO LTD7 citations73
US5789760AAug 4, 1998
Multiquantum barrier Schottky junction device
FURUKAWA ELECTRIC CO LTD12 citations73
US5608230AMar 4, 1997
Strained superlattice semiconductor photodetector having a side contact structure
FURUKAWA ELECTRIC CO LTD12 citations73
US5432124AJul 11, 1995
Method of manufacturing compound semiconductor
FURUKAWA ELECTRIC CO LTD8 citations71
US5394424AFeb 28, 1995
Semiconductor laser device
FURUKAWA ELECTRIC CO LTD8 citations71
US5173912ADec 22, 1992
Double-carrier confinement laser diode with quantum well active and sch structures
FURUKAWA ELECTRIC CO LTD19 citations69
US5932890AAug 3, 1999
Field effect transistor loaded with multiquantum barrier
FURUKAWA ELECTRIC CO LTD5 citations62
US5383213AJan 17, 1995
Semiconductor device with current confinement structure
FURUKAWA ELECTRIC CO LTD5 citations62
US5362974ANov 8, 1994
Group II-VI material semiconductor optical device with strained multiquantum barriers
FURUKAWA ELECTRIC CO LTD6 citations62