Inventor
CHEN YU-HSIA
US24 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YU-HSIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEADWAY TECHNOLOGIES INC
18 patentsUS7602033B2Oct 13, 2009
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
HEADWAY TECHNOLOGIES INC82 citations98
US7390529B2Jun 24, 2008
Free layer for CPP GMR having iron rich NiFe
HEADWAY TECHNOLOGIES INC67 citations98
US7331100B2Feb 19, 2008
Process of manufacturing a seed/AFM combination for a CPP GMR device
HEADWAY TECHNOLOGIES INC57 citations98
US7780820B2Aug 24, 2010
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
HEADWAY TECHNOLOGIES INC23 citations93
US7672088B2Mar 2, 2010
Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications
HEADWAY TECHNOLOGIES INC27 citations93
US7333306B2Feb 19, 2008
Magnetoresistive spin valve sensor with tri-layer free layer
HEADWAY TECHNOLOGIES INC40 citations93
US7610674B2Nov 3, 2009
Method to form a current confining path of a CPP GMR device
HEADWAY TECHNOLOGIES INC20 citations92
US7583481B2Sep 1, 2009
FCC-like trilayer AP2 structure for CPP GMR EM improvement
HEADWAY TECHNOLOGIES INC22 citations92
US8008740B2Aug 30, 2011
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
HEADWAY TECHNOLOGIES INC10 citations84
US7646568B2Jan 12, 2010
Ultra thin seed layer for CPP or TMR structure
HEADWAY TECHNOLOGIES INC9 citations84
US7352543B2Apr 1, 2008
Ta based bilayer seed for IrMn CPP spin valve
HEADWAY TECHNOLOGIES INC10 citations84
US7918014B2Apr 5, 2011
Method of manufacturing a CPP structure with enhanced GMR ratio
HEADWAY TECHNOLOGIES INC6 citations74
US7872838B2Jan 18, 2011
Uniformity in CCP magnetic read head devices
HEADWAY TECHNOLOGIES INC5 citations74
US7355823B2Apr 8, 2008
Ta based bilayer seed for IrMn CPP spin valve
HEADWAY TECHNOLOGIES INC7 citations74
US7990660B2Aug 2, 2011
Multiple CCP layers in magnetic read head devices
HEADWAY TECHNOLOGIES INC2 citations63
US7288281B2Oct 30, 2007
CPP spin valve with ultra-thin CoFe(50%) laminations
HEADWAY TECHNOLOGIES INC2 citations63
US8012316B2Sep 6, 2011
FCC-like trilayer AP2 structure for CPP GMR EM improvement
HEADWAY TECHNOLOGIES INC4 citations62
US7978440B2Jul 12, 2011
Seed/AFM combination for CCP GMR device
HEADWAY TECHNOLOGIES INC1 citations52
APPLIED SPINTRONICS INC
2 patentsUS6960480B1Nov 1, 2005
Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head
APPLIED SPINTRONICS INC56 citations96
US7238979B2Jul 3, 2007
Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM
APPLIED SPINTRONICS INC14 citations84