P

Inventor

YON GUK-HYON

KR12 patents

Patents

12 patents
US7683421B2Mar 23, 2010

NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations83
US8962444B2Feb 24, 2015

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations71
US7645668B2Jan 12, 2010

Charge trapping type semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7871897B2Jan 18, 2011

Method of forming shallow trench isolation regions in devices with NMOS and PMOS regions

SAMSUNG ELECTRONICS CO LTD5 citations61
US7514744B2Apr 7, 2009

Semiconductor device including carrier accumulation layers

SAMSUNG ELECTRONICS CO LTD4 citations61
US7492006B2Feb 17, 2009

Semiconductor transistors having surface insulation layers and methods of fabricating such transistors

SAMSUNG ELECTRONICS CO LTD3 citations61
US7176049B2Feb 13, 2007

Method of increasing a free carrier concentration in a semiconductor substrate

SAMSUNG ELECTRONICS CO LTD2 citations60
US12543312B2Feb 3, 2026

Semiconductor memory device including a charge storage layer

SAMSUNG ELECTRONICS CO LTD0 citations51
US11339473B2May 24, 2022

Apparatus for atomic layer deposition and method of forming thin film using the apparatus

SAMSUNG ELECTRONICS CO LTD0 citations50
US7485554B2Feb 3, 2009

Method of increasing a free carrier concentration in a semiconductor substrate

SAMSUNG ELECTRONICS CO LTD0 citations50
US9991281B2Jun 5, 2018

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US9754959B2Sep 5, 2017

Non-volatile semiconductor devices

SAMSUNG ELECTRONICS CO LTD1 citations49