Inventor
DE SANTIS FABIO
IT19 patents
⚠️ This page may combine multiple inventors who share the name “DE SANTIS FABIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
10 patentsUS6535019B2Mar 18, 2003
Switching control method of a level shifter and corresponding improved self-controlled level shifter
ST MICROELECTRONICS SRL23 citations92
US9640230B2May 2, 2017
Identification of an operational condition of a sector of memory cells in a non-volatile memory
ST MICROELECTRONICS SRL2 citations73
US9443566B2Sep 13, 2016
Identification of a condition of a sector of memory cells in a non-volatile memory
ST MICROELECTRONICS SRL3 citations73
US6894934B2May 17, 2005
Non-volatile memory cell sensing circuit, particularly for low power supply voltages and high capacitive load values
ST MICROELECTRONICS SRL8 citations73
US10862392B2Dec 8, 2020
Charge pump circuit with improved discharge and corresponding discharge method
ST MICROELECTRONICS SRL2 citations70
US9627066B1Apr 18, 2017
Non volatile memory cell and memory array
ST MICROELECTRONICS SRL6 citations70
US10109329B2Oct 23, 2018
Identification of a condition of a sector of memory cells in a non-volatile memory
ST MICROELECTRONICS SRL0 citations52
US9442149B2Sep 13, 2016
Measuring leakage currents and measuring circuit for carrying out such measuring
ST MICROELECTRONICS SRL0 citations52
US9025355B2May 5, 2015
Non-volatile memory device with clustered memory cells
ST MICROELECTRONICS SRL0 citations51
US9691493B1Jun 27, 2017
Device for generating a voltage reference comprising a non-volatile memory cell
ST MICROELECTRONICS SRL0 citations39
ST MICROELECTRONICS INT NV
8 patentsUS9634562B1Apr 25, 2017
Voltage doubling circuit and charge pump applications for the voltage doubling circuit
ST MICROELECTRONICS INT NV22 citations94
US11424676B2Aug 23, 2022
Positive and negative charge pump control
ST MICROELECTRONICS INT NV3 citations73
US9159425B2Oct 13, 2015
Non-volatile memory with reduced sub-threshold leakage during program and erase operations
ST MICROELECTRONICS INT NV4 citations70
US11863066B2Jan 2, 2024
Positive and negative charge pump control
ST MICROELECTRONICS INT NV0 citations62
US11665915B2May 30, 2023
Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof
ST MICROELECTRONICS INT NV0 citations62
US11611275B2Mar 21, 2023
Positive and negative charge pump control
ST MICROELECTRONICS INT NV0 citations62
US10658364B2May 19, 2020
Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof
ST MICROELECTRONICS INT NV1 citations62
US9755632B2Sep 5, 2017
Cascode voltage generating circuit and method
ST MICROELECTRONICS INT NV0 citations41