Inventor
PURAYATH VINOD R
US35 patents
⚠️ This page may combine multiple inventors who share the name “PURAYATH VINOD R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
13 patentsUS9496167B2Nov 15, 2016
Integrated bit-line airgap formation and gate stack post clean
APPLIED MATERIALS INC132 citations99
US9263278B2Feb 16, 2016
Dopant etch selectivity control
APPLIED MATERIALS INC150 citations99
US9165786B1Oct 20, 2015
Integrated oxide and nitride recess for better channel contact in 3D architectures
APPLIED MATERIALS INC184 citations99
US9159606B1Oct 13, 2015
Metal air gap
APPLIED MATERIALS INC201 citations99
US9136273B1Sep 15, 2015
Flash gate air gap
APPLIED MATERIALS INC184 citations99
US10319739B2Jun 11, 2019
Accommodating imperfectly aligned memory holes
APPLIED MATERIALS INC68 citations98
US9773695B2Sep 26, 2017
Integrated bit-line airgap formation and gate stack post clean
APPLIED MATERIALS INC113 citations98
US9449846B2Sep 20, 2016
Vertical gate separation
APPLIED MATERIALS INC133 citations98
US9396989B2Jul 19, 2016
Air gaps between copper lines
APPLIED MATERIALS INC144 citations98
US9378978B2Jun 28, 2016
Integrated oxide recess and floating gate fin trimming
APPLIED MATERIALS INC132 citations98
US10541246B2Jan 21, 2020
3D flash memory cells which discourage cross-cell electrical tunneling
APPLIED MATERIALS INC8 citations84
US10529737B2Jan 7, 2020
Accommodating imperfectly aligned memory holes
APPLIED MATERIALS INC8 citations84
US10325923B2Jun 18, 2019
Accommodating imperfectly aligned memory holes
APPLIED MATERIALS INC8 citations84
SANDISK TECHNOLOGIES INC
10 patentsUS9252151B2Feb 2, 2016
Three dimensional NAND device with birds beak containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC60 citations98
US9460958B2Oct 4, 2016
Air gap isolation in non-volatile memory
SANDISK TECHNOLOGIES INC15 citations84
US9123714B2Sep 1, 2015
Metal layer air gap formation
SANDISK TECHNOLOGIES INC7 citations84
US8987087B2Mar 24, 2015
Three dimensional NAND device with birds beak containing floating gates and method of making thereof
SANDISK TECHNOLOGIES INC14 citations84
US9331181B2May 3, 2016
Nanodot enhanced hybrid floating gate for non-volatile memory devices
SANDISK TECHNOLOGIES INC6 citations73
US9177808B2Nov 3, 2015
Memory device with control gate oxygen diffusion control and method of making thereof
SANDISK TECHNOLOGIES INC2 citations62
US9548311B2Jan 17, 2017
Non-volatile storage element with suspended charge storage region
SANDISK TECHNOLOGIES INC0 citations52
US9349740B2May 24, 2016
Non-volatile storage element with suspended charge storage region
SANDISK TECHNOLOGIES INC0 citations52
US9224746B2Dec 29, 2015
Inverted-T word line and formation for non-volatile storage
SANDISK TECHNOLOGIES INC0 citations52
US9030016B2May 12, 2015
Semiconductor device with copper interconnects separated by air gaps
SANDISK TECHNOLOGIES INC1 citations51
SANDISK 3D LLC
4 patentsUS9123890B2Sep 1, 2015
Resistance-switching memory cell with multiple raised structures in a bottom electrode
SANDISK 3D LLC5 citations84
US9466644B2Oct 11, 2016
Resistance-switching memory cell with multiple raised structures in a bottom electrode
SANDISK 3D LLC4 citations73
US9437813B2Sep 6, 2016
Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask
SANDISK 3D LLC2 citations63
US8877586B2Nov 4, 2014
Process for forming resistive switching memory cells using nano-particles
SANDISK 3D LLC1 citations50
SANDISK CORP
3 patentsUS7919809B2Apr 5, 2011
Dielectric layer above floating gate for reducing leakage current
SANDISK CORP12 citations84
US7915124B2Mar 29, 2011
Method of forming dielectric layer above floating gate for reducing leakage current
SANDISK CORP5 citations63
US7915664B2Mar 29, 2011
Non-volatile memory with sidewall channels and raised source/drain regions
SANDISK CORP5 citations63