Inventor
SHIN ILGYOU
KR13 patents
Patents
13 patentsUS11362182B2Jun 14, 2022
Semiconductor device including superlattice pattern
SAMSUNG ELECTRONICS CO LTD14 citations93
US11322583B2May 3, 2022
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US12328937B2Jun 10, 2025
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12256564B2Mar 18, 2025
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12166081B2Dec 10, 2024
Semiconductor device-including source and drain regions and superlattice pattern having a pillar shape
SAMSUNG ELECTRONICS CO LTD0 citations62
US11888028B2Jan 30, 2024
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11791400B2Oct 17, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11777001B2Oct 3, 2023
Semiconductor device including superlattice pattern
SAMSUNG ELECTRONICS CO LTD0 citations62
US11626401B2Apr 11, 2023
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11417731B2Aug 16, 2022
Semiconductor device including a field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11201087B2Dec 14, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12453141B2Oct 21, 2025
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11996443B2May 28, 2024
Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60