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Inventor

RUFFELL SIMON

US29 patents
⚠️ This page may combine multiple inventors who share the name “RUFFELL SIMON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

19 patents
US11488823B2Nov 1, 2022

Techniques to engineer nanoscale patterned features using ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC4 citations84
US11043380B2Jun 22, 2021

Techniques to engineer nanoscale patterned features using ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC7 citations84
US10008384B2Jun 26, 2018

Techniques to engineer nanoscale patterned features using ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC6 citations84
US9589811B2Mar 7, 2017

FinFET spacer etch with no fin recess and no gate-spacer pull-down

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC10 citations84
US9984889B2May 29, 2018

Techniques for manipulating patterned features using ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC11 citations83
US11908691B2Feb 20, 2024

Techniques to engineer nanoscale patterned features using ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations74
US10971368B2Apr 6, 2021

Techniques for processing substrates using directional reactive ion etching

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations72
US10381232B2Aug 13, 2019

Techniques for manipulating patterned features using ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US10222202B2Mar 5, 2019

Three dimensional structure fabrication control using novel processing system

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US9934981B2Apr 3, 2018

Techniques for processing substrates using directional reactive ion etching

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations72
US11127593B2Sep 21, 2021

Techniques and apparatus for elongation patterning using angled ion beams

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations70
US9453279B2Sep 27, 2016

Method for selectively depositing a layer on a three dimensional structure

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations63
US10229832B2Mar 12, 2019

Techniques for forming patterned features using directional ions

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations62
US10204909B2Feb 12, 2019

Non-uniform gate oxide thickness for DRAM device

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations62
US9929015B2Mar 27, 2018

High efficiency apparatus and method for depositing a layer on a three dimensional structure

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations58
US10109494B2Oct 23, 2018

FinFet spacer etch with no fin recess and no gate-spacer pull-down

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations52
US9847228B2Dec 19, 2017

Method for selectively depositing a layer on a three dimensional structure

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations52
US10546730B2Jan 28, 2020

Filling a cavity in a substrate using sputtering and deposition

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations42
US10280512B2May 7, 2019

Apparatus and method for carbon film deposition profile control

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations31

APPLIED MATERIALS INC

5 patents

VARIAN SEMICONDUCTOR EQUIPMENT

4 patents

EVANS MORGAN D

1 patent