Inventor

HU XIANG

US62 patents

⚠️ This page may combine multiple inventors who share the name “HU XIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HU XIANG

GLOBALFOUNDRIES INC

Semiconductor structure having gap fill dielectric layer disposed between fins

Devices and methods of forming fins at tight fin pitches

Planar metrology pad adjacent a set of fins of a fin field effect transistor device

Integrated circuits having improved gate structures and methods for fabricating same

Semiconductor contacts and methods of fabrication

Dimension-controlled via formation processing

Circuit structures and methods of fabrication with enhanced contact via electrical connection

Patterning multiple, dense features in a semiconductor device using a memorization layer

Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same

Devices with chamfer-less vias multi-patterning and methods for forming chamfer-less vias

Hard mask etch and dielectric etch aware overlap for via and metal layers

Double-pattern gate formation processing with critical dimension control

Dimension-controlled via formation processing

Methods for fabricating integrated circuits with improved patterning schemes

Method of forming semiconductor fins

Planar metrology pad adjacent a set of fins of a fin field effect transistor device

FinFET devices comprising a dielectric layer/CMP stop layer/hardmask/etch stop layer/gap-fill material stack

Non-planar semiconductor device with multiple-head epitaxial structure on fin

Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads

Lithographic stack excluding SiARC and method of using same

Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads

Planar metrology pad adjacent a set of fins of a fin field effect transistor device

Self-aligned contacts and methods of fabrication

Customized alleviation of stresses generated by through-substrate via(S)

Facilitating mask pattern formation

HUAWEI TECH CO LTD

Session management method, device, and system

Service management method and apparatus thereof

Traffic offloading method and related device in roaming scenario

Session establishment method and apparatus, system, and computer storage medium

Communication method and apparatus

User plane rerouting method and apparatus

Method, device and system for identifying application identifier

Policy formulating method, policy server, and gateway

Policy formulating method, policy server, and gateway

Application server switching method, session management network element, and terminal device

ALIBABA GROUP HOLDING LTD

Intelligent customer services based on a vector propagation on a click graph model

Intelligent customer services based on a vector propagation on a click graph model

Encoding scheduling method, server, client, and system for acquiring remote desktop

SEMICONDUCTOR MFG INT SHANGHAI CORP

Semiconductor structure and fabrication method thereof

Semiconductor structure and fabrication method thereof

Semiconductor structure and fabrication method thereof

HU XIANG

Interconnect formation using a sidewall mask layer

Hat rack

ARC residue-free etching

CHARTERED SEMICONDUCTOR MFG

Thin film etching method and semiconductor device fabrication using same

QUALCOMM INC

Logic optimizing power switch enable delay

IBM

Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer

GLOBALFOUNDRIES SG PTE LTD

ARC residue-free etching

SEMICONDUCTOR MFG INT BEIJING CORP

Method for forming semiconductor structure

VMWARE INC

Scaling display contents based on user-to-screen distance