Inventor
CHANG MAU-CHUNG F
US22 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MAU-CHUNG F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ROCKWELL SCIENCE CENTER LLC
9 patentsUS6232841B1May 15, 2001
Integrated tunable high efficiency power amplifier
ROCKWELL SCIENCE CENTER LLC276 citations98
US6232847B1May 15, 2001
Trimmable singleband and tunable multiband integrated oscillator using micro-electromechanical system (MEMS) technology
ROCKWELL SCIENCE CENTER LLC160 citations98
US5959516ASep 28, 1999
Tunable-trimmable micro electro mechanical system (MEMS) capacitor
ROCKWELL SCIENCE CENTER LLC191 citations98
US5880921AMar 9, 1999
Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
ROCKWELL SCIENCE CENTER LLC347 citations98
US5872489AFeb 16, 1999
Integrated tunable inductance network and method
ROCKWELL SCIENCE CENTER LLC200 citations98
US6094102AJul 25, 2000
Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method
ROCKWELL SCIENCE CENTER LLC99 citations97
US6049702AApr 11, 2000
Integrated passive transceiver section
ROCKWELL SCIENCE CENTER LLC148 citations97
US5834975ANov 10, 1998
Integrated variable gain power amplifier and method
ROCKWELL SCIENCE CENTER LLC137 citations97
US5994985ANov 30, 1999
Integrable high-Q tunable capacitor and method
ROCKWELL SCIENCE CENTER LLC45 citations92
ROCKWELL INTERNATIONAL CORP
8 patentsUS4996165AFeb 26, 1991
Self-aligned dielectric assisted planarization process
ROCKWELL INTERNATIONAL CORP123 citations98
US5391257AFeb 21, 1995
Method of transferring a thin film to an alternate substrate
ROCKWELL INTERNATIONAL CORP356 citations96
US5250826AOct 5, 1993
Planar HBT-FET Device
ROCKWELL INTERNATIONAL CORP63 citations95
US5266819ANov 30, 1993
Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method
ROCKWELL INTERNATIONAL CORP28 citations92
US4731340AMar 15, 1988
Dual lift-off self aligning process for making heterojunction bipolar transistors
ROCKWELL INTERNATIONAL CORP40 citations92
US4670090AJun 2, 1987
Method for producing a field effect transistor
ROCKWELL INTERNATIONAL CORP52 citations91
US4807008AFeb 21, 1989
Static memory cell using a heterostructure complementary transistor switch
ROCKWELL INTERNATIONAL CORP9 citations73
US5028549AJul 2, 1991
Etched back edge isolation process for heterojunction bipolar transistors
ROCKWELL INTERNATIONAL CORP4 citations63