Inventor

ASBECK PETER M

US18 patents

⚠️ This page may combine multiple inventors who share the name “ASBECK PETER M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ASBECK PETER M

ROCKWELL INTERNATIONAL CORP

Self-aligned dielectric assisted planarization process

Planar HBT-FET Device

Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method

Dual lift-off self aligning process for making heterojunction bipolar transistors

Heterostructure semiconductor laser

Lateral bipolar transistor

Static memory cell using a heterostructure complementary transistor switch

Self-aligned, self-passivated advanced dual lift-off heterojunction bipolar transistor method

Etched back edge isolation process for heterojunction bipolar transistors

High power tuning device using layered varactors

UNIV CALIFORNIA

Radio transmission frequency digital signal generation

Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET

HBT with nitrogen-containing current blocking base collector interface and method for current blocking

Method for enhancing power amplifier efficiency and linearity and power amplifier

Adaptive bias circuits and methods for CMOS millimeter-wave power amplifiers

COLDWATT INC

Substrate driven field-effect transistor

CHANG CHARLES E

Methods and apparatus for a composite collector double heterojunction bipolar transistor

ASBECK PETER M

Supply-modulated RF power amplifier and RF amplification methods