Inventor
OGLE ROBERT B
US29 patents
⚠️ This page may combine multiple inventors who share the name “OGLE ROBERT B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
27 patentsUS6803272B1Oct 12, 2004
Use of high-K dielectric material in modified ONO structure for semiconductor devices
ADVANCED MICRO DEVICES INC149 citations99
US6674138B1Jan 6, 2004
Use of high-k dielectric materials in modified ONO structure for semiconductor devices
ADVANCED MICRO DEVICES INC490 citations99
US6645882B1Nov 11, 2003
Preparation of composite high-K/standard-K dielectrics for semiconductor devices
ADVANCED MICRO DEVICES INC122 citations99
US6265268B1Jul 24, 2001
High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
ADVANCED MICRO DEVICES INC94 citations97
US6656749B1Dec 2, 2003
In-situ monitoring during laser thermal annealing
ADVANCED MICRO DEVICES INC57 citations96
US6555439B1Apr 29, 2003
Partial recrystallization of source/drain region before laser thermal annealing
ADVANCED MICRO DEVICES INC53 citations96
US7001814B1Feb 21, 2006
Laser thermal annealing methods for flash memory devices
ADVANCED MICRO DEVICES INC31 citations93
US6825115B1Nov 30, 2004
Post silicide laser thermal annealing to avoid dopant deactivation
ADVANCED MICRO DEVICES INC28 citations93
US6812106B1Nov 2, 2004
Reduced dopant deactivation of source/drain extensions using laser thermal annealing
ADVANCED MICRO DEVICES INC38 citations93
US6780789B1Aug 24, 2004
Laser thermal oxidation to form ultra-thin gate oxide
ADVANCED MICRO DEVICES INC24 citations93
US6743689B1Jun 1, 2004
Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions
ADVANCED MICRO DEVICES INC21 citations93
US6680250B1Jan 20, 2004
Formation of deep amorphous region to separate junction from end-of-range defects
ADVANCED MICRO DEVICES INC43 citations93
US6319775B1Nov 20, 2001
Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device
ADVANCED MICRO DEVICES INC65 citations93
US6849925B1Feb 1, 2005
Preparation of composite high-K/standard-K dielectrics for semiconductor devices
ADVANCED MICRO DEVICES INC22 citations92
US6180538B1Jan 30, 2001
Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition
ADVANCED MICRO DEVICES INC50 citations92
US6867097B1Mar 15, 2005
Method of making a memory cell with polished insulator layer
ADVANCED MICRO DEVICES INC45 citations91
US7091097B1Aug 15, 2006
End-of-range defect minimization in semiconductor device
ADVANCED MICRO DEVICES INC12 citations84
US6867080B1Mar 15, 2005
Polysilicon tilting to prevent geometry effects during laser thermal annealing
ADVANCED MICRO DEVICES INC19 citations84
US6551888B1Apr 22, 2003
Tuning absorption levels during laser thermal annealing
ADVANCED MICRO DEVICES INC13 citations84
US7351638B1Apr 1, 2008
Scanning laser thermal annealing
ADVANCED MICRO DEVICES INC7 citations74
US6902966B2Jun 7, 2005
Low-temperature post-dopant activation process
ADVANCED MICRO DEVICES INC7 citations74
US6746944B1Jun 8, 2004
Low nisi/si interface contact resistance with preamorphizing and laser thermal annealing
ADVANCED MICRO DEVICES INC9 citations74
US6689682B1Feb 10, 2004
Multilayer anti-reflective coating for semiconductor lithography
ADVANCED MICRO DEVICES INC9 citations74
US6620705B1Sep 16, 2003
Nitriding pretreatment of ONO nitride for oxide deposition
ADVANCED MICRO DEVICES INC7 citations74
US6265751B1Jul 24, 2001
Method and system for reducing ARC layer removal by condensing the ARC layer
ADVANCED MICRO DEVICES INC7 citations74
US7211489B1May 1, 2007
Localized halo implant region formed using tilt pre-amorphization implant and laser thermal anneal
ADVANCED MICRO DEVICES INC5 citations63
US6858496B1Feb 22, 2005
Oxidizing pretreatment of ONO layer for flash memory
ADVANCED MICRO DEVICES INC0 citations52