Inventor
RAVIT CLAIRE
BE2 patents
Patents
2 patentsUS7554138B2Jun 30, 2009
Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer
NXP BV6 citations57
US7157349B2Jan 2, 2007
Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material
NXP BV0 citations30