Inventor

MANABE SOHEI

US68 patents

⚠️ This page may combine multiple inventors who share the name “MANABE SOHEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MANABE SOHEI

OMNIVISION TECH INC

Backside illuminated image sensor having deep light reflective trenches

Vertical transfer gate storage for a global shutter in an image sensor

Apparatus and method for low dark current floating diffusion

CMOS image sensor with dual floating diffusions per pixel for flicker-free detection of light emitting diodes

Backside-illuminated (BSI) image sensor with backside diffusion doping

CMOS image sensor using high frame rate with frame addition and movement compensation

Hybrid charge coupled CMOS image sensor having an amplification transistor controlled by a sense node

Image sensor pixel cell with switched deep trench isolation structure

Dual VPIN HDR image sensor pixel

Imaging sensor with boosted photodiode drive

Storage gate protection

High speed rolling image sensor with ADM architecture and method of implementing thereof

Photodiode and filter configuration for high dynamic range image sensor

Image sensor pixel for high dynamic range image sensor

Image sensor pixel cell with switched deep trench isolation structure

Image sensor with low electrical cross-talk

Low voltage active CMOS pixel on an N-type substrate with complete reset

Systems and methods for detecting light-emitting diode without flickering

High dynamic range sensor with blooming drain

Low voltage active CMOS pixel on an N-type substrate with complete reset

Active pixel cell using negative to positive voltage swing transfer transistor

Wide dynamic range image sensor with global shutter

Wide dynamic range image sensor with global shutter

Photogate for front-side-illuminated infrared image sensor and method of manufacturing the same

Image sensor having mirror-symmetrical pixel columns

Floating diffusion of image sensor with low leakage current

Low noise CMOS image sensor by stack architecture

Negative biased substrate for pixels in stacked image sensors

Image sensor with boosted photodiodes for time of flight measurements

Image sensor pixel for high dynamic range image sensor

Backside illuminated imaging sensor with light reflecting transfer gate

Imaging sensor using asymmetric transfer transistor

Sensor comprising gate modulation with inductor to form a resonant circuit

Dark current reduction for image sensor having electronic global shutter and image storage capacitors

MANABE SOHEI

Image sensor with global shutter and in pixel storage transistor

Image sensor with fixed potential output transistor

Enhanced pixel cell architecture for an image sensor having a direct output from a buried channel source follower transistor to a bit line

CMOS image sensor with reset shield line

Backside-illuminated (BSI) image sensor with backside diffusion doping

Method, apparatus and system for providing improved full well capacity in an image sensor pixel

TOSHIBA KK

Low noise CCD image sensor having a plurality of horizontal CCD registers

Photoconductive target of image pickup tube

Solid image pickup apparatus

MAO DULI

Image sensor having supplemental capacitive coupling node

Image sensor having supplemental capacitive coupling node

DAI TIEJUN

Circuit and photo sensor overlap for backside illumination image sensor

Circuit and photo sensor overlap for backside illumination image sensor

VENEZIA VINCENT

Backside illuminated image sensor having deep light reflective trenches

LYU JEONG-HO

Transistor with self-aligned channel width

JAPAN BROADCASTING CORP

Solid state image sensor having low and high level signal component detectors