P

Inventor

DING YI

CN215 patents
⚠️ This page may combine multiple inventors who share the name “DING YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PROMOS TECHNOLOGIES INC

14 patents
US6885044B2Apr 26, 2005

Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates

PROMOS TECHNOLOGIES INC78 citations98
US7018895B2Mar 28, 2006

Nonvolatile memory cell with multiple floating gates formed after the select gate

PROMOS TECHNOLOGIES INC42 citations96
US7091091B2Aug 15, 2006

Nonvolatile memory fabrication methods in which a dielectric layer underlying a floating gate layer is spaced from an edge of an isolation trench and/or an edge of the floating gate layer

PROMOS TECHNOLOGIES INC30 citations93
US7053438B2May 30, 2006

Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates

PROMOS TECHNOLOGIES INC34 citations93
US6951782B2Oct 4, 2005

Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions

PROMOS TECHNOLOGIES INC27 citations93
US6844586B2Jan 18, 2005

Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates

PROMOS TECHNOLOGIES INC19 citations93
US6838342B1Jan 4, 2005

Nonvolatile memory fabrication methods comprising lateral recessing of dielectric sidewalls at substrate isolation regions

PROMOS TECHNOLOGIES INC42 citations93
US7301196B2Nov 27, 2007

Nonvolatile memories and methods of fabrication

PROMOS TECHNOLOGIES INC10 citations84
US7195964B2Mar 27, 2007

Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit

PROMOS TECHNOLOGIES INC11 citations84
US7169667B2Jan 30, 2007

Nonvolatile memory cell with multiple floating gates formed after the select gate

PROMOS TECHNOLOGIES INC10 citations84
US7148104B2Dec 12, 2006

Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures

PROMOS TECHNOLOGIES INC13 citations84
US6995060B2Feb 7, 2006

Fabrication of integrated circuit elements in structures with protruding features

PROMOS TECHNOLOGIES INC12 citations84
US6974739B2Dec 13, 2005

Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit

PROMOS TECHNOLOGIES INC13 citations84
US6902974B2Jun 7, 2005

Fabrication of conductive gates for nonvolatile memories from layers with protruding portions

PROMOS TECHNOLOGIES INC16 citations84

ALD GROUP LTD

9 patents

INTEL CORP

9 patents

AMAZON TECH INC

4 patents

FORD GLOBAL TECH LLC

3 patents

GEORGIA TECH RES INST

3 patents

MOSEL VITELIC INC

2 patents

DING YI

1 patent

ORACLE INT CORP

1 patent

UNIV JOHNS HOPKINS

1 patent

XIAO NIAN

1 patent

HUAWEI DEVICE CO LTD

1 patent

RICOH KK

1 patent

Showing the top 50 of 215 patents by PatentIndex Score.