Inventor
CHO HAN-KU
KR35 patents
⚠️ This page may combine multiple inventors who share the name “CHO HAN-KU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS8003543B2Aug 23, 2011
Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD21 citations92
US7732341B2Jun 8, 2010
Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US6381165B1Apr 30, 2002
Semiconductor memory device having storage node electrodes offset from each other
SAMSUNG ELECTRONICS CO LTD30 citations92
US8026044B2Sep 27, 2011
Method of forming fine patterns of semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations91
US7873935B2Jan 18, 2011
Method of manufacturing a mask
SAMSUNG ELECTRONICS CO LTD16 citations84
US7539970B2May 26, 2009
Method of manufacturing mask
SAMSUNG ELECTRONICS CO LTD15 citations84
US8895226B2Nov 25, 2014
Coating composition for DUV filtering, method of forming photoresist pattern using the same and method of fabricating semiconductor device by using the method
SAMSUNG ELECTRONICS CO LTD6 citations83
US7900170B2Mar 1, 2011
System and method correcting optical proximity effect using pattern configuration dependent OPC models
SAMSUNG ELECTRONICS CO LTD7 citations82
US6841801B2Jan 11, 2005
Mask for correcting optical proximity effect
SAMSUNG ELECTRONICS CO LTD8 citations74
US7344999B2Mar 18, 2008
Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations73
US7205241B2Apr 17, 2007
Method for manufacturing semiconductor device with contact body extended in direction of bit line
SAMSUNG ELECTRONICS CO LTD8 citations73
US7807318B2Oct 5, 2010
Reflective photomask and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7795099B2Sep 14, 2010
Semiconductor devices having Fin-type active areas and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7604917B2Oct 20, 2009
Polymer, top coating layer, top coating composition and immersion lithography process using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7378196B2May 27, 2008
Method of manufacturing mask for correcting optical proximity effect
SAMSUNG ELECTRONICS CO LTD4 citations63
US7787301B2Aug 31, 2010
Flash memory device using double patterning technology and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7452825B2Nov 18, 2008
Method of forming a mask structure and method of forming a minute pattern using the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7361612B2Apr 22, 2008
Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7259065B2Aug 21, 2007
Method of forming trench in semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations62
US6492701B1Dec 10, 2002
Semiconductor device having anti-reflective cap and spacer, method of manufacturing the same, and method of manufacturing photoresist pattern using the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US8013374B2Sep 6, 2011
Semiconductor memory devices including offset bit lines
SAMSUNG ELECTRONICS CO LTD2 citations61
US7940373B2May 10, 2011
Compensating masks, multi-optical systems using the masks, and methods of compensating for 3-D mask effect using the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US8013375B2Sep 6, 2011
Semiconductor memory devices including diagonal bit lines
SAMSUNG ELECTRONICS CO LTD4 citations57
US7799490B2Sep 21, 2010
Optical masks and methods for measuring aberration of a beam
SAMSUNG ELECTRONICS CO LTD0 citations52
US7670761B2Mar 2, 2010
Method of forming a fine pattern of a semiconductor device using a resist reflow measurement key
SAMSUNG ELECTRONICS CO LTD0 citations52
US7670725B2Mar 2, 2010
Optical masks and methods for measuring aberration of a beam
SAMSUNG ELECTRONICS CO LTD0 citations52
US7604918B2Oct 20, 2009
Photosensitive polymer and photoresist composition having the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7547936B2Jun 16, 2009
Semiconductor memory devices including offset active regions
SAMSUNG ELECTRONICS CO LTD1 citations51
US7403276B2Jul 22, 2008
Photomask for measuring lens aberration, method of its manufacture, and method of its use
SAMSUNG ELECTRONICS CO LTD0 citations51
US7221014B2May 22, 2007
DRAM devices having an increased density layout
SAMSUNG ELECTRONICS CO LTD1 citations51
US7842450B2Nov 30, 2010
Method of forming a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US7550383B2Jun 23, 2009
Methods of performing a photolithography process for forming asymmetric patterns and methods of forming a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations42