Inventor
CHENG CHUN-FAI
CA50 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHUN-FAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS11107736B1Aug 31, 2021
Gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US12166075B2Dec 10, 2024
Method and structure for gate-all-around devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854906B2Dec 26, 2023
Gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11145536B2Oct 12, 2021
Gate dielectric preserving gate cut process
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10872897B2Dec 22, 2020
Cutting metal gates in fin field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10699940B2Jun 30, 2020
Gate dielectric preserving gate cut process
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10424588B2Sep 24, 2019
Cutting metal gates in fin field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12218013B2Feb 4, 2025
Gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11876013B2Jan 16, 2024
Gate dielectric preserving gate cut process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11329159B2May 10, 2022
Strained structure of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11152250B2Oct 19, 2021
Gate dielectric preserving gate cut process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12575134B2Mar 10, 2026
Multi-gate devices with reduced contact resistance and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12389653B2Aug 12, 2025
Semiconductor devices and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727340B2Jul 28, 2020
Strained structure of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10658372B2May 19, 2020
Cutting metal gates in fin field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9698057B2Jul 4, 2017
Method of manufacturing strained source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9431404B2Aug 30, 2016
Techniques providing high-k dielectric metal gate CMOS
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12176390B2Dec 24, 2024
Semiconductor device structure and method for forming the semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9627507B2Apr 18, 2017
Strained asymmetric source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
USRE47562EAug 6, 2019
Strained-channel semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
CHENG CHUN-FAI
9 patentsUS8482079B2Jul 9, 2013
Semiconductor device and method of manufacturing the same
CHENG CHUN-FAI5 citations84
US8558289B2Oct 15, 2013
Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof
CHENG CHUN-FAI8 citations83
US9698054B2Jul 4, 2017
Strained structure of a p-type field effect transistor
CHENG CHUN-FAI3 citations73
US9847225B2Dec 19, 2017
Semiconductor device and method of manufacturing the same
CHENG CHUN-FAI4 citations71
US8928094B2Jan 6, 2015
Strained asymmetric source/drain
CHENG CHUN-FAI2 citations61
US8872228B2Oct 28, 2014
Strained-channel semiconductor device fabrication
CHENG CHUN-FAI3 citations57
US9799750B2Oct 24, 2017
Semiconductor device and fabrication method thereof
CHENG CHUN-FAI1 citations51
US8405160B2Mar 26, 2013
Multi-strained source/drain structures
CHENG CHUN-FAI0 citations51
US9311845B2Apr 12, 2016
Method and apparatus for gray-scale gamma correction for electroluminescent displays
CHENG CHUN-FAI0 citations41
TAIWAN SEMICONDUCTOR MFG
8 patentsUS8900960B2Dec 2, 2014
Integrated circuit device with well controlled surface proximity and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG6 citations84
US8642417B2Feb 4, 2014
Method of manufacturing strained source/drain structures
TAIWAN SEMICONDUCTOR MFG14 citations84
US9099346B2Aug 4, 2015
Techniques providing high-k dielectric metal gate CMOS
TAIWAN SEMICONDUCTOR MFG2 citations63
US9048253B2Jun 2, 2015
Method of manufacturing strained source/drain structures
TAIWAN SEMICONDUCTOR MFG2 citations63
US8368147B2Feb 5, 2013
Strained semiconductor device with recessed channel
TAIWAN SEMICONDUCTOR MFG3 citations63
US8952459B2Feb 10, 2015
Gate structure having lightly doped region
TAIWAN SEMICONDUCTOR MFG2 citations62
US9349831B2May 24, 2016
Integrated circuit device with well controlled surface proximity and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG0 citations52
US9293537B2Mar 22, 2016
High performance strained source-drain structure and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
TSAI MING-HUAN
4 patentsUS8236659B2Aug 7, 2012
Source and drain feature profile for improving device performance and method of manufacturing same
TSAI MING-HUAN41 citations97
US8216906B2Jul 10, 2012
Method of manufacturing integrated circuit device with well controlled surface proximity
TSAI MING-HUAN21 citations92
US8614132B2Dec 24, 2013
Integrated circuit device with well controlled surface proximity and method of manufacturing same
TSAI MING-HUAN10 citations84
US8445940B2May 21, 2013
Source and drain feature profile for improving device performance
TSAI MING-HUAN12 citations83