Inventor
CLEVENGER LAWRENCE
US27 patents
⚠️ This page may combine multiple inventors who share the name “CLEVENGER LAWRENCE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
24 patentsUS7531407B2May 12, 2009
Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
IBM61 citations98
US6700203B1Mar 2, 2004
Semiconductor structure having in-situ formed unit resistors
IBM28 citations93
US8024012B2Sep 20, 2011
Intelligent wireless power charging system
IBM37 citations92
US7851321B2Dec 14, 2010
Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
IBM16 citations92
US7657995B2Feb 9, 2010
Method of fabricating a microelectromechanical system (MEMS) switch
IBM29 citations92
US7473979B2Jan 6, 2009
Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
IBM18 citations92
US7348870B2Mar 25, 2008
Structure and method of fabricating a hinge type MEMS switch
IBM21 citations92
US7312529B2Dec 25, 2007
Structure and method for producing multiple size interconnections
IBM36 citations92
US7052621B2May 30, 2006
Bilayered metal hardmasks for use in Dual Damascene etch schemes
IBM15 citations92
US6777286B2Aug 17, 2004
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
IBM18 citations92
US7749778B2Jul 6, 2010
Addressable hierarchical metal wire test methodology
IBM17 citations84
US7241681B2Jul 10, 2007
Bilayered metal hardmasks for use in dual damascene etch schemes
IBM13 citations83
US7091542B1Aug 15, 2006
Method of forming a MIM capacitor for Cu BEOL application
IBM15 citations83
US6545339B2Apr 8, 2003
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
IBM8 citations74
US6541331B2Apr 1, 2003
Method of manufacturing high dielectric constant material
IBM12 citations74
US6524908B2Feb 25, 2003
Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
IBM6 citations74
US6268293B1Jul 31, 2001
Method of forming wires on an integrated circuit chip
IBM8 citations70
US6831369B2Dec 14, 2004
Semiconductor structure having in-situ formed unit resistors and method for fabrication
IBM1 citations63
US6828232B2Dec 7, 2004
Semiconductor structure having in-situ formed unit resistors and method for fabrication
IBM4 citations63
US6794226B2Sep 21, 2004
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
IBM3 citations63
US6624526B2Sep 23, 2003
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
IBM3 citations63
US7329600B2Feb 12, 2008
Low dielectric semiconductor device and process for fabricating the same
IBM1 citations52
US6707097B2Mar 16, 2004
Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
IBM0 citations52
US6653246B2Nov 25, 2003
High dielectric constant materials
IBM1 citations52