Inventor
SHIN SEUNG-JUN
KR28 patents
⚠️ This page may combine multiple inventors who share the name “SHIN SEUNG-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS10115448B2Oct 30, 2018
Memory device for refresh and memory system including the same
SAMSUNG ELECTRONICS CO LTD20 citations94
US10680007B2Jun 9, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations84
US10579263B2Mar 3, 2020
Memory system
SAMSUNG ELECTRONICS CO LTD4 citations84
US9767882B2Sep 19, 2017
Method of refreshing memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US10754564B2Aug 25, 2020
Memory device having a plurality of low power states
SAMSUNG ELECTRONICS CO LTD4 citations83
US11114463B2Sep 7, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations73
US10114548B2Oct 30, 2018
Synchronous dynamic random access memory (SDRAM) device, memory controller for same, and method of operating same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10671319B2Jun 2, 2020
Memory device configured to store and output address in response to internal command
SAMSUNG ELECTRONICS CO LTD4 citations72
US10497422B2Dec 3, 2019
Memory device performing care operation for disturbed row and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations71
US9754649B2Sep 5, 2017
Memory system with command mixing for timing control
SAMSUNG ELECTRONICS CO LTD1 citations63
US12300353B2May 13, 2025
Memory device and memory system
SAMSUNG ELECTRONICS CO LTD0 citations62
US12035528B2Jul 9, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11797203B2Oct 24, 2023
Memory device having a plurality of low power states
SAMSUNG ELECTRONICS CO LTD0 citations62
US11749326B2Sep 5, 2023
Dynamic random access memory (DRAM) device and memory controller therefor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11733890B2Aug 22, 2023
Memory device having a plurality of low power states
SAMSUNG ELECTRONICS CO LTD0 citations62
US11715507B2Aug 1, 2023
Dynamic random access memory (DRAM) device and memory controller therefor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11644989B2May 9, 2023
Memory device having a plurality of low power states
SAMSUNG ELECTRONICS CO LTD0 citations62
US11081152B2Aug 3, 2021
Dynamic random access memory (DRAM) device, memory controller therefor, and memory system
SAMSUNG ELECTRONICS CO LTD0 citations62
US10930330B2Feb 23, 2021
Synchronous dynamic random access memory (SDRAM) device, memory controller therefor, and method of operating same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10950704B2Mar 16, 2021
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD1 citations61
US9472258B2Oct 18, 2016
Method of operating memory device and method of operating memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US10930671B2Feb 23, 2021
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD0 citations50