P

Inventor

WANG QIGUANG

CN27 patents
⚠️ This page may combine multiple inventors who share the name “WANG QIGUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

22 patents
US11183508B2Nov 23, 2021

Methods of semiconductor device fabrication

YANGTZE MEMORY TECH CO LTD3 citations68
US12254925B2Mar 18, 2025

Control method and controller of 3D NAND flash

YANGTZE MEMORY TECH CO LTD0 citations62
US12016180B2Jun 18, 2024

Manufacturing method of three-dimensional memory device with improved RC delay

YANGTZE MEMORY TECH CO LTD0 citations62
US11948641B2Apr 2, 2024

Control method and controller of 3D NAND flash

YANGTZE MEMORY TECH CO LTD0 citations62
US11812611B2Nov 7, 2023

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11751389B2Sep 5, 2023

Three-dimensional memory device with reduced memory unit interference and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11696444B2Jul 4, 2023

Semiconductor device and method of fabrication thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11665905B2May 30, 2023

Three-dimensional memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11250910B2Feb 15, 2022

Control method and controller of a programming process for 3D NAND flash

YANGTZE MEMORY TECH CO LTD0 citations62
US11239250B2Feb 1, 2022

Semiconductor device and method of fabrication thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11121152B2Sep 14, 2021

Three-dimensional memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD1 citations62
US11871565B2Jan 9, 2024

Methods of semiconductor device fabrication

YANGTZE MEMORY TECH CO LTD0 citations58
US11839083B2Dec 5, 2023

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations58
US11672115B2Jun 6, 2023

Methods of semiconductor device fabrication

YANGTZE MEMORY TECH CO LTD0 citations58
US11282854B2Mar 22, 2022

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations58
US12490434B2Dec 2, 2025

Memory device

YANGTZE MEMORY TECH CO LTD0 citations54
US11469245B2Oct 11, 2022

Memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations54
US11839079B2Dec 5, 2023

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US11482535B2Oct 25, 2022

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US10854626B2Dec 1, 2020

Methods for forming three-dimensional memory device having channel structures with native oxide layer

YANGTZE MEMORY TECH CO LTD0 citations52
US12471278B2Nov 11, 2025

Three-dimensional memory device with charge trap layer including carbon region and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations50
US12317491B2May 27, 2025

Three-dimensional memory device and fabrication method for enhanced reliability

YANGTZE MEMORY TECH CO LTD0 citations49

SZ DJI TECHNOLOGY CO LTD

2 patents

WANG QIGUANG

2 patents

UNIV CHINA MINING

1 patent