Inventor
WANG QIGUANG
CN27 patents
⚠️ This page may combine multiple inventors who share the name “WANG QIGUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
22 patentsUS11183508B2Nov 23, 2021
Methods of semiconductor device fabrication
YANGTZE MEMORY TECH CO LTD3 citations68
US12254925B2Mar 18, 2025
Control method and controller of 3D NAND flash
YANGTZE MEMORY TECH CO LTD0 citations62
US12016180B2Jun 18, 2024
Manufacturing method of three-dimensional memory device with improved RC delay
YANGTZE MEMORY TECH CO LTD0 citations62
US11948641B2Apr 2, 2024
Control method and controller of 3D NAND flash
YANGTZE MEMORY TECH CO LTD0 citations62
US11812611B2Nov 7, 2023
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11751389B2Sep 5, 2023
Three-dimensional memory device with reduced memory unit interference and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11696444B2Jul 4, 2023
Semiconductor device and method of fabrication thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11665905B2May 30, 2023
Three-dimensional memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11250910B2Feb 15, 2022
Control method and controller of a programming process for 3D NAND flash
YANGTZE MEMORY TECH CO LTD0 citations62
US11239250B2Feb 1, 2022
Semiconductor device and method of fabrication thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11121152B2Sep 14, 2021
Three-dimensional memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD1 citations62
US11871565B2Jan 9, 2024
Methods of semiconductor device fabrication
YANGTZE MEMORY TECH CO LTD0 citations58
US11839083B2Dec 5, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations58
US11672115B2Jun 6, 2023
Methods of semiconductor device fabrication
YANGTZE MEMORY TECH CO LTD0 citations58
US11282854B2Mar 22, 2022
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations58
US12490434B2Dec 2, 2025
Memory device
YANGTZE MEMORY TECH CO LTD0 citations54
US11469245B2Oct 11, 2022
Memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations54
US11839079B2Dec 5, 2023
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US11482535B2Oct 25, 2022
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US10854626B2Dec 1, 2020
Methods for forming three-dimensional memory device having channel structures with native oxide layer
YANGTZE MEMORY TECH CO LTD0 citations52
US12471278B2Nov 11, 2025
Three-dimensional memory device with charge trap layer including carbon region and fabrication method thereof
YANGTZE MEMORY TECH CO LTD0 citations50
US12317491B2May 27, 2025
Three-dimensional memory device and fabrication method for enhanced reliability
YANGTZE MEMORY TECH CO LTD0 citations49