Inventor
BEINVOGL WILLY
DE6 patents
Patents
6 patentsUS4473436ASep 25, 1984
Method of producing structures from double layers of metal silicide and polysilicon on integrated circuit substrates by RIE utilizing SF6 and Cl2
SIEMENS AG27 citations90
US4658496AApr 21, 1987
Method for manufacturing VLSI MOS-transistor circuits
SIEMENS AG35 citations88
US4380489AApr 19, 1983
Method of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etching
SIEMENS AG26 citations80
US4479850AOct 30, 1984
Method for etching integrated semiconductor circuits containing double layers consisting of polysilicon and metal silicide
SIEMENS AG14 citations72
US4731343AMar 15, 1988
Method for manufacturing insulation separating the active regions of a VLSI CMOS circuit
SIEMENS AG6 citations60
US4360414ANov 23, 1982
Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching
SIEMENS AG6 citations60