Inventor
SHAMMA NADER
US25 patents
⚠️ This page may combine multiple inventors who share the name “SHAMMA NADER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
19 patentsUS9618846B2Apr 11, 2017
PECVD films for EUV lithography
LAM RES CORP284 citations95
US11322351B2May 3, 2022
Tin oxide films in semiconductor device manufacturing
LAM RES CORP15 citations94
US11257674B2Feb 22, 2022
Eliminating yield impact of stochastics in lithography
LAM RES CORP15 citations94
US10796912B2Oct 6, 2020
Eliminating yield impact of stochastics in lithography
LAM RES CORP18 citations94
US10546748B2Jan 28, 2020
Tin oxide films in semiconductor device manufacturing
LAM RES CORP25 citations94
US10269566B2Apr 23, 2019
Etching substrates using ale and selective deposition
LAM RES CORP15 citations94
US9362133B2Jun 7, 2016
Method for forming a mask by etching conformal film on patterned ashable hardmask
LAM RES CORP19 citations92
US12094711B2Sep 17, 2024
Tin oxide films in semiconductor device manufacturing
LAM RES CORP5 citations86
US10685836B2Jun 16, 2020
Etching substrates using ALE and selective deposition
LAM RES CORP10 citations84
US9922839B2Mar 20, 2018
Low roughness EUV lithography
LAM RES CORP6 citations84
US9304396B2Apr 5, 2016
PECVD films for EUV lithography
LAM RES CORP9 citations79
US12437995B2Oct 7, 2025
Tin oxide films in semiconductor device manufacturing
LAM RES CORP1 citations75
US12417916B2Sep 16, 2025
Tin oxide films in semiconductor device manufacturing
LAM RES CORP1 citations75
US10438807B2Oct 8, 2019
Low roughness EUV lithography
LAM RES CORP3 citations73
US10192759B2Jan 29, 2019
Image reversal with AHM gap fill for multiple patterning
LAM RES CORP4 citations72
US12474640B2Nov 18, 2025
Integration of dry development and etch processes for EUV patterning in a single process chamber
LAM RES CORP4 citations71
US12315727B2May 27, 2025
Eliminating yield impact of stochastics in lithography
LAM RES CORP0 citations62
US11031244B2Jun 8, 2021
Modification of SNO2 surface for EUV lithography
LAM RES CORP0 citations61
US12372872B2Jul 29, 2025
Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation
LAM RES CORP0 citations59
NOVELLUS SYSTEMS INC
3 patentsUS9390909B2Jul 12, 2016
Soft landing nanolaminates for advanced patterning
NOVELLUS SYSTEMS INC500 citations99
US9905423B2Feb 27, 2018
Soft landing nanolaminates for advanced patterning
NOVELLUS SYSTEMS INC5 citations84
US10192742B2Jan 29, 2019
Soft landing nanolaminates for advanced patterning
NOVELLUS SYSTEMS INC1 citations73