P

Inventor

SHAMMA NADER

US25 patents
⚠️ This page may combine multiple inventors who share the name “SHAMMA NADER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAM RES CORP

19 patents
US9618846B2Apr 11, 2017

PECVD films for EUV lithography

LAM RES CORP284 citations95
US11322351B2May 3, 2022

Tin oxide films in semiconductor device manufacturing

LAM RES CORP15 citations94
US11257674B2Feb 22, 2022

Eliminating yield impact of stochastics in lithography

LAM RES CORP15 citations94
US10796912B2Oct 6, 2020

Eliminating yield impact of stochastics in lithography

LAM RES CORP18 citations94
US10546748B2Jan 28, 2020

Tin oxide films in semiconductor device manufacturing

LAM RES CORP25 citations94
US10269566B2Apr 23, 2019

Etching substrates using ale and selective deposition

LAM RES CORP15 citations94
US9362133B2Jun 7, 2016

Method for forming a mask by etching conformal film on patterned ashable hardmask

LAM RES CORP19 citations92
US12094711B2Sep 17, 2024

Tin oxide films in semiconductor device manufacturing

LAM RES CORP5 citations86
US10685836B2Jun 16, 2020

Etching substrates using ALE and selective deposition

LAM RES CORP10 citations84
US9922839B2Mar 20, 2018

Low roughness EUV lithography

LAM RES CORP6 citations84
US9304396B2Apr 5, 2016

PECVD films for EUV lithography

LAM RES CORP9 citations79
US12437995B2Oct 7, 2025

Tin oxide films in semiconductor device manufacturing

LAM RES CORP1 citations75
US12417916B2Sep 16, 2025

Tin oxide films in semiconductor device manufacturing

LAM RES CORP1 citations75
US10438807B2Oct 8, 2019

Low roughness EUV lithography

LAM RES CORP3 citations73
US10192759B2Jan 29, 2019

Image reversal with AHM gap fill for multiple patterning

LAM RES CORP4 citations72
US12474640B2Nov 18, 2025

Integration of dry development and etch processes for EUV patterning in a single process chamber

LAM RES CORP4 citations71
US12315727B2May 27, 2025

Eliminating yield impact of stochastics in lithography

LAM RES CORP0 citations62
US11031244B2Jun 8, 2021

Modification of SNO2 surface for EUV lithography

LAM RES CORP0 citations61
US12372872B2Jul 29, 2025

Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation

LAM RES CORP0 citations59

NOVELLUS SYSTEMS INC

3 patents

HEWLETT PACKARD CO

2 patents

ASML NETHERLANDS BV

1 patent