Inventor
CHAN VEI-HAN
US49 patents
⚠️ This page may combine multiple inventors who share the name “CHAN VEI-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
14 patentsUS6275415B1Aug 14, 2001
Multiple byte channel hot electron programming using ramped gate and source bias voltage
ADVANCED MICRO DEVICES INC63 citations95
US6252276B1Jun 26, 2001
Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide
ADVANCED MICRO DEVICES INC16 citations93
US6001713ADec 14, 1999
Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device
ADVANCED MICRO DEVICES INC48 citations93
US5972751AOct 26, 1999
Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device
ADVANCED MICRO DEVICES INC24 citations93
US5856946AJan 5, 1999
Memory cell programming with controlled current injection
ADVANCED MICRO DEVICES INC35 citations93
US5888867AMar 30, 1999
Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration
ADVANCED MICRO DEVICES INC49 citations92
US5875130AFeb 23, 1999
Method for programming flash electrically erasable programmable read-only memory
ADVANCED MICRO DEVICES INC20 citations92
US6046932AApr 4, 2000
Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
ADVANCED MICRO DEVICES INC46 citations91
US6989319B1Jan 24, 2006
Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices
ADVANCED MICRO DEVICES INC11 citations84
US6025240AFeb 15, 2000
Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices
ADVANCED MICRO DEVICES INC12 citations74
US6103602AAug 15, 2000
Method and system for providing a drain side pocket implant
ADVANCED MICRO DEVICES INC7 citations73
US5940709AAug 17, 1999
Method and system for source only reoxidation after junction implant for flash memory devices
ADVANCED MICRO DEVICES INC5 citations63
US6236596B1May 22, 2001
Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices
ADVANCED MICRO DEVICES INC6 citations60
US6410956B1Jun 25, 2002
Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices
ADVANCED MICRO DEVICES INC1 citations52
MOSEL VITELIC INC
7 patentsUS6570215B2May 27, 2003
Nonvolatile memories with floating gate spacers, and methods of fabrication
MOSEL VITELIC INC17 citations92
US6562681B2May 13, 2003
Nonvolatile memories with floating gate spacers, and methods of fabrication
MOSEL VITELIC INC38 citations92
US6584018B2Jun 24, 2003
Nonvolatile memory structures and access methods
MOSEL VITELIC INC15 citations84
US6787415B1Sep 7, 2004
Nonvolatile memory with pedestals
MOSEL VITELIC INC13 citations79
US6821847B2Nov 23, 2004
Nonvolatile memory structures and fabrication methods
MOSEL VITELIC INC7 citations74
US6815760B2Nov 9, 2004
Nonvolatile memory structures and fabrication methods
MOSEL VITELIC INC10 citations74
US6674669B2Jan 6, 2004
Nonvolatile memory structures and access methods
MOSEL VITELIC INC6 citations73
APLUS FLASH TECHNOLOGY INC
6 patentsUS6717846B1Apr 6, 2004
Non-volatile semiconductor memory having split-gate memory cells mirrored in a virtual ground configuration
APLUS FLASH TECHNOLOGY INC18 citations93
US6660585B1Dec 9, 2003
Stacked gate flash memory cell with reduced disturb conditions
APLUS FLASH TECHNOLOGY INC48 citations93
US6258668B1Jul 10, 2001
Array architecture and process flow of nonvolatile memory devices for mass storage applications
APLUS FLASH TECHNOLOGY INC29 citations93
US6134150AOct 17, 2000
Erase condition for flash memory
APLUS FLASH TECHNOLOGY INC22 citations93
US6891221B2May 10, 2005
Array architecture and process flow of nonvolatile memory devices for mass storage applications
APLUS FLASH TECHNOLOGY INC6 citations74
US6262622B1Jul 17, 2001
Breakdown-free high voltage input circuitry
APLUS FLASH TECHNOLOGY INC6 citations63
PROMOS TECHNOLOGIES INC
5 patentsUS7122415B2Oct 17, 2006
Atomic layer deposition of interpoly oxides in a non-volatile memory device
PROMOS TECHNOLOGIES INC67 citations97
US7910429B2Mar 22, 2011
Method of forming ONO-type sidewall with reduced bird's beak
PROMOS TECHNOLOGIES INC28 citations91
US7057231B2Jun 6, 2006
Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate
PROMOS TECHNOLOGIES INC9 citations74
US7005338B2Feb 28, 2006
Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate
PROMOS TECHNOLOGIES INC5 citations63
US6962848B2Nov 8, 2005
Nonvolatile memory structures and fabrication methods
PROMOS TECHNOLOGIES INC4 citations63
KORDUS II LOUIS CHARLES
4 patentsUS8183551B2May 22, 2012
Multi-terminal phase change devices
KORDUS II LOUIS CHARLES9 citations83
US8822967B2Sep 2, 2014
Multi-terminal phase change devices
KORDUS II LOUIS CHARLES3 citations61
US8486745B2Jul 16, 2013
Multi-terminal phase change devices
KORDUS II LOUIS CHARLES1 citations60
US8178380B2May 15, 2012
Method for selectively establishing an electrical connection in a multi-terminal phase change device
KORDUS II LOUIS CHARLES2 citations60
MICROSOFT TECHNOLOGY LICENSING LLC
4 patentsUS9923003B2Mar 20, 2018
CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layer
MICROSOFT TECHNOLOGY LICENSING LLC2 citations71
US11630245B2Apr 18, 2023
Micro lens sensor having micro lens heights that vary based on image height
MICROSOFT TECHNOLOGY LICENSING LLC0 citations63
US11079515B2Aug 3, 2021
Micro lens time-of-flight sensor having micro lens heights that vary based on image height
MICROSOFT TECHNOLOGY LICENSING LLC0 citations63
US11435476B2Sep 6, 2022
Time-of-flight RGB-IR image sensor
MICROSOFT TECHNOLOGY LICENSING LLC0 citations56