P

Inventor

CHAN VEI-HAN

US49 patents
⚠️ This page may combine multiple inventors who share the name “CHAN VEI-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

14 patents
US6275415B1Aug 14, 2001

Multiple byte channel hot electron programming using ramped gate and source bias voltage

ADVANCED MICRO DEVICES INC63 citations95
US6252276B1Jun 26, 2001

Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide

ADVANCED MICRO DEVICES INC16 citations93
US6001713ADec 14, 1999

Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device

ADVANCED MICRO DEVICES INC48 citations93
US5972751AOct 26, 1999

Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device

ADVANCED MICRO DEVICES INC24 citations93
US5856946AJan 5, 1999

Memory cell programming with controlled current injection

ADVANCED MICRO DEVICES INC35 citations93
US5888867AMar 30, 1999

Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration

ADVANCED MICRO DEVICES INC49 citations92
US5875130AFeb 23, 1999

Method for programming flash electrically erasable programmable read-only memory

ADVANCED MICRO DEVICES INC20 citations92
US6046932AApr 4, 2000

Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM

ADVANCED MICRO DEVICES INC46 citations91
US6989319B1Jan 24, 2006

Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices

ADVANCED MICRO DEVICES INC11 citations84
US6025240AFeb 15, 2000

Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices

ADVANCED MICRO DEVICES INC12 citations74
US6103602AAug 15, 2000

Method and system for providing a drain side pocket implant

ADVANCED MICRO DEVICES INC7 citations73
US5940709AAug 17, 1999

Method and system for source only reoxidation after junction implant for flash memory devices

ADVANCED MICRO DEVICES INC5 citations63
US6236596B1May 22, 2001

Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices

ADVANCED MICRO DEVICES INC6 citations60
US6410956B1Jun 25, 2002

Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices

ADVANCED MICRO DEVICES INC1 citations52

MOSEL VITELIC INC

7 patents

APLUS FLASH TECHNOLOGY INC

6 patents

PROMOS TECHNOLOGIES INC

5 patents

KORDUS II LOUIS CHARLES

4 patents

MICROSOFT TECHNOLOGY LICENSING LLC

4 patents

AMIC TECHNOLOGY INC

2 patents

AGATE LOGIC INC

2 patents

CSWITCH CORP

1 patent

CHAN VEI-HAN

1 patent

CSWITCH INC

1 patent

AGATA LOGIC INC

1 patent

OLIVA ANTONIETTA

1 patent