Inventor
DEGUET CHRYSTEL
FR22 patents
⚠️ This page may combine multiple inventors who share the name “DEGUET CHRYSTEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DEGUET CHRYSTEL
5 patentsUS9106199B2Aug 11, 2015
Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same
DEGUET CHRYSTEL18 citations82
US8142593B2Mar 27, 2012
Method of transferring a thin film onto a support
DEGUET CHRYSTEL10 citations80
US8664084B2Mar 4, 2014
Method for making a thin-film element
DEGUET CHRYSTEL4 citations72
US8445122B2May 21, 2013
Data storage medium and associated method
DEGUET CHRYSTEL3 citations60
US9991439B2Jun 5, 2018
Method for implanting a piezoelectric material
DEGUET CHRYSTEL0 citations47
SOITEC SILICON ON INSULATOR
4 patentsUS7229898B2Jun 12, 2007
Methods for fabricating a germanium on insulator wafer
SOITEC SILICON ON INSULATOR19 citations84
US8372733B2Feb 12, 2013
Method for fabricating a locally passivated germanium-on-insulator substrate
SOITEC SILICON ON INSULATOR2 citations61
US7776716B2Aug 17, 2010
Method for fabricating a semiconductor on insulator wafer
SOITEC SILICON ON INSULATOR2 citations61
US9076713B2Jul 7, 2015
Locally passivated germanium-on-insulator substrate
SOITEC SILICON ON INSULATOR0 citations51
COMMISSARIAT ENERGIE ATOMIQUE
4 patentsUS7608491B2Oct 27, 2009
Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areas
COMMISSARIAT ENERGIE ATOMIQUE7 citations73
US7863156B2Jan 4, 2011
Method of producing a strained layer
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US8003550B2Aug 23, 2011
Method for revealing emergent dislocations in a germanium-base crystalline element
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US9769931B2Sep 19, 2017
Method for producing an electronic device
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
FOURNEL FRANCK
3 patentsUS8207048B2Jun 26, 2012
Method for producing ordered nanostructures
FOURNEL FRANCK2 citations61
US8501589B2Aug 6, 2013
Method in the microelectronics fields of forming a monocrystalline layer
FOURNEL FRANCK3 citations60
US8841202B2Sep 23, 2014
Method of producing a hybrid substrate by partial recrystallization of a mixed layer
FOURNEL FRANCK1 citations50