Inventor
IMBERT BRUNO
FR15 patents
⚠️ This page may combine multiple inventors who share the name “IMBERT BRUNO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
13 patentsUS10115698B2Oct 30, 2018
Method for direct adhesion via low-roughness metal layers
COMMISSARIAT ENERGIE ATOMIQUE1 citations49
US10032742B2Jul 24, 2018
Method for obtaining a bonding surface for direct bonding
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US10403597B2Sep 3, 2019
Direct bonding method
COMMISSARIAT ENERGIE ATOMIQUE0 citations48
US10759921B2Sep 1, 2020
Method for producing an aqueous foam
COMMISSARIAT ENERGIE ATOMIQUE0 citations45
US10586783B2Mar 10, 2020
Method for direct bonding of III-V semiconductor substrates with a radical oxide layer
COMMISSARIAT ENERGIE ATOMIQUE0 citations45
US10710192B2Jul 14, 2020
Method for adhering a first structure and a second structure
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US10679963B2Jun 9, 2020
Method for assembling two substrates of different natures via a ductile intermediate layer
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US10483111B2Nov 19, 2019
Metal-metal direct bonding method
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US9922953B2Mar 20, 2018
Process for producing a structure by assembling at least two elements by direct adhesive bonding
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US9472530B2Oct 18, 2016
Method for carrying out a conductive direct metal bonding
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US10283364B2May 7, 2019
Method for assembling substrates by bonding indium phosphate surfaces
COMMISSARIAT ENERGIE ATOMIQUE0 citations35
US10236210B2Mar 19, 2019
Direct bonding method
COMMISSARIAT ENERGIE ATOMIQUE0 citations34
US9735038B2Aug 15, 2017
Process for manufacturing a semiconductor structure with temporary bonding via metal layers
COMMISSARIAT ENERGIE ATOMIQUE0 citations34