Inventor
MURAOKA SHOZO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “MURAOKA SHOZO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
20 patentsUS5968264AOct 19, 1999
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
SHINETSU HANDOTAI KK106 citations99
US6048395AApr 11, 2000
Method for producing a silicon single crystal having few crystal defects
SHINETSU HANDOTAI KK35 citations93
US6364947B1Apr 2, 2002
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
SHINETSU HANDOTAI KK24 citations92
US6334896B1Jan 1, 2002
Single-crystal silicon wafer having few crystal defects and method for manufacturing the same
SHINETSU HANDOTAI KK23 citations92
US6261361B1Jul 17, 2001
Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
SHINETSU HANDOTAI KK34 citations92
US6159438ADec 12, 2000
Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
SHINETSU HANDOTAI KK19 citations92
US6077343AJun 20, 2000
Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
SHINETSU HANDOTAI KK33 citations92
US6197109B1Mar 6, 2001
Method for producing low defect silicon single crystal doped with nitrogen
SHINETSU HANDOTAI KK17 citations84
US6348180B1Feb 19, 2002
Silicon single crystal wafer having few crystal defects
SHINETSU HANDOTAI KK12 citations74
US6120598ASep 19, 2000
Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method
SHINETSU HANDOTAI KK8 citations74
US6120599ASep 19, 2000
Silicon single crystal wafer having few crystal defects, and method for producing the same
SHINETSU HANDOTAI KK13 citations74
US6066306AMay 23, 2000
Silicon single crystal wafer having few crystal defects, and method RFO producing the same
SHINETSU HANDOTAI KK12 citations74
US6027562AFeb 22, 2000
Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method
SHINETSU HANDOTAI KK6 citations74
US5968266AOct 19, 1999
Apparatus for manufacturing single crystal of silicon
SHINETSU HANDOTAI KK16 citations74
US5948164ASep 7, 1999
Seed crystal holder
SHINETSU HANDOTAI KK13 citations74
US5882397AMar 16, 1999
Crystal pulling method
SHINETSU HANDOTAI KK16 citations74
US5871578AFeb 16, 1999
Methods for holding and pulling single crystal
SHINETSU HANDOTAI KK13 citations74
US6053975AApr 25, 2000
Crystal holding apparatus
SHINETSU HANDOTAI KK6 citations63
US5976246ANov 2, 1999
Process for producing silicon single crystal
SHINETSU HANDOTAI KK3 citations63
US5911821AJun 15, 1999
Method of holding a monocrystal, and method of growing the same
SHINETSU HANDOTAI KK4 citations63