Inventor
TOMIYA SHIGETAKA
JP21 patents
⚠️ This page may combine multiple inventors who share the name “TOMIYA SHIGETAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
16 patentsUS6576533B2Jun 10, 2003
Method of forming semiconductor thin film of group III nitride compound semiconductor.
SONY CORP64 citations95
US8361924B2Jan 29, 2013
Fine particles of core-shell structure and functional device incorporated therewith
SONY CORP33 citations92
US6891268B2May 10, 2005
Nitride semiconductor laser
SONY CORP36 citations92
US6667252B2Dec 23, 2003
Method of manufacturing compound semiconductor substrate
SONY CORP16 citations84
US7754504B2Jul 13, 2010
Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode
SONY CORP14 citations83
US6682991B1Jan 27, 2004
Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
SONY CORP14 citations83
US6577662B1Jun 10, 2003
Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof
SONY CORP9 citations74
US6069367AMay 30, 2000
Semiconductor element and semiconductor light-emitting and semiconductor photoreceptor devices
SONY CORP13 citations74
US5828086AOct 27, 1998
Semiconductor light emitting device with a Mg superlattice structure
SONY CORP8 citations74
US5665977ASep 9, 1997
Semiconductor light emitting device with defect decomposing and blocking layers
SONY CORP14 citations74
US5418374AMay 23, 1995
Semiconductor device having an active layer with regions with different bandgaps
SONY CORP18 citations74
US9911894B2Mar 6, 2018
Nitride-based III-V group compound semiconductor
SONY CORP2 citations72
US10411307B2Sep 10, 2019
Secondary battery, evaluation method and production method therefor, and charge-discharge control device
SONY CORP2 citations71
US7135772B2Nov 14, 2006
Nitride semiconductor laser
SONY CORP5 citations62
US5766345AJun 16, 1998
Epitaxial growth method of semiconductor
SONY CORP4 citations58
US9871349B2Jan 16, 2018
Light-emitting element
SONY CORP0 citations36
SUMITOMO ELECTRIC INDUSTRIES
2 patentsUS7091056B2Aug 15, 2006
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device
SUMITOMO ELECTRIC INDUSTRIES12 citations84
US7176499B2Feb 13, 2007
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device
SUMITOMO ELECTRIC INDUSTRIES8 citations74