Inventor
FUNATO KENJI
JP10 patents
Patents
10 patentsUS6576533B2Jun 10, 2003
Method of forming semiconductor thin film of group III nitride compound semiconductor.
SONY CORP64 citations95
US5863811AJan 26, 1999
Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers
SONY CORP66 citations95
US5497015AMar 5, 1996
Quantum interference transistor
SONY CORP22 citations92
US5147823ASep 15, 1992
Method for forming an ultrafine metal pattern using an electron beam
SONY CORP33 citations92
US6682991B1Jan 27, 2004
Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
SONY CORP14 citations83
US6362016B1Mar 26, 2002
Semiconductor light emitting device
SONY CORP5 citations73
US6081001AJun 27, 2000
Nitride semiconductor light emitting device
SONY CORP12 citations73
US5294807AMar 15, 1994
Quantum effect device in which conduction between a plurality of quantum dots or wires is achieved by tunnel transition
SONY CORP9 citations73
US5171718ADec 15, 1992
Method for forming a fine pattern by using a patterned resist layer
SONY CORP12 citations73
US4888622ADec 19, 1989
Superconductor electron device
SONY CORP3 citations62