Inventor
BUCHANAN DOUGLAS A
US19 patents
⚠️ This page may combine multiple inventors who share the name “BUCHANAN DOUGLAS A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
18 patentsUS6984591B1Jan 10, 2006
Precursor source mixtures
IBM843 citations99
US6511876B2Jan 28, 2003
High mobility FETS using A1203 as a gate oxide
IBM84 citations98
US6444592B1Sep 3, 2002
Interfacial oxidation process for high-k gate dielectric process integration
IBM191 citations98
US5470661ANov 28, 1995
Diamond-like carbon films from a hydrocarbon helium plasma
IBM362 citations98
US6511873B2Jan 28, 2003
High-dielectric constant insulators for FEOL capacitors
IBM38 citations96
US7029966B2Apr 18, 2006
Process options of forming silicided metal gates for advanced CMOS devices
IBM53 citations95
US5569501AOct 29, 1996
Diamond-like carbon films from a hydrocarbon helium plasma
IBM82 citations95
US7326610B2Feb 5, 2008
Process options of forming silicided metal gates for advanced CMOS devices
IBM34 citations92
US4859253AAug 22, 1989
Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
IBM39 citations89
US6667207B2Dec 23, 2003
High-dielectric constant insulators for FEOL capacitors
IBM12 citations74
US6887797B2May 3, 2005
Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
IBM4 citations72
US6803266B2Oct 12, 2004
Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby
IBM9 citations72
US6603181B2Aug 5, 2003
MOS device having a passivated semiconductor-dielectric interface
IBM9 citations72
US6958506B2Oct 25, 2005
High-dielectric constant insulators for feol capacitors
IBM3 citations63
US6436196B1Aug 20, 2002
Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
IBM4 citations61
US6346487B1Feb 12, 2002
Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
IBM4 citations61
US7887711B2Feb 15, 2011
Method for etching chemically inert metal oxides
IBM1 citations51
US7863083B2Jan 4, 2011
High temperature processing compatible metal gate electrode for pFETS and methods for fabrication
IBM1 citations51