Inventor
CHIEN HO-CHING
TW23 patents
⚠️ This page may combine multiple inventors who share the name “CHIEN HO-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
16 patentsUS6642076B1Nov 4, 2003
Asymmetrical reset transistor with double-diffused source for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG78 citations98
US7232697B2Jun 19, 2007
Semiconductor device having enhanced photo sensitivity and method for manufacture thereof
TAIWAN SEMICONDUCTOR MFG16 citations93
US7288429B2Oct 30, 2007
Image sensor with vertically integrated thin-film photodiode
TAIWAN SEMICONDUCTOR MFG31 citations92
US6995411B2Feb 7, 2006
Image sensor with vertically integrated thin-film photodiode
TAIWAN SEMICONDUCTOR MFG27 citations92
US7061028B2Jun 13, 2006
Image sensor device and method to form image sensor device
TAIWAN SEMICONDUCTOR MFG23 citations89
US6982443B2Jan 3, 2006
Hollow dielectric for image sensor
TAIWAN SEMICONDUCTOR MFG11 citations84
US7847847B2Dec 7, 2010
Structure for CMOS image sensor with a plurality of capacitors
TAIWAN SEMICONDUCTOR MFG7 citations74
US7332368B2Feb 19, 2008
Light guide for image sensor
TAIWAN SEMICONDUCTOR MFG5 citations74
US7253458B2Aug 7, 2007
CMOS image sensor
TAIWAN SEMICONDUCTOR MFG2 citations63
US7242430B2Jul 10, 2007
High dynamic range image sensor cell
TAIWAN SEMICONDUCTOR MFG5 citations63
US7145190B2Dec 5, 2006
Pinned photodiode integrated with trench isolation and fabrication method
TAIWAN SEMICONDUCTOR MFG4 citations62
US7067891B2Jun 27, 2006
Sensor element having elevated diode with sidewall passivated bottom electrode
TAIWAN SEMICONDUCTOR MFG4 citations57
US7649231B2Jan 19, 2010
Asymmetrical reset transistor with double-diffused source for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG1 citations52
US7553689B2Jun 30, 2009
Semiconductor device with micro-lens and method of making the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US7479403B2Jan 20, 2009
Pinned photodiode integrated with trench isolation and fabrication method
TAIWAN SEMICONDUCTOR MFG1 citations52
US7338830B2Mar 4, 2008
Hollow dielectric for image sensor
TAIWAN SEMICONDUCTOR MFG0 citations52
IND TECH RES INST
3 patentsVANGUARD INT SEMICONDUCT CORP
2 patentsUS6037220AMar 14, 2000
Method of increasing the surface area of a DRAM capacitor structure via the use of hemispherical grained polysilicon
VANGUARD INT SEMICONDUCT CORP52 citations89
US6153516ANov 28, 2000
Method of fabricating a modified polysilicon plug structure
VANGUARD INT SEMICONDUCT CORP7 citations73