Inventor

SIMKA HARSONO S

US21 patents

⚠️ This page may combine multiple inventors who share the name “SIMKA HARSONO S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIMKA HARSONO S

INTEL CORP

Tunable gate electrode work function material for transistor applications

Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Catalytically enhanced atomic layer deposition process

Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

Using unstable nitrides to form semiconductor structures

Deposition process for iodine-doped ruthenium barrier layers

Direct tailoring of the composition and density of ALD films

Using unstable nitrides to form semiconductor structures

Atomic layer volatilization process for metal layers

Using unstable nitrides to form semiconductor structures

Deposition method for high-k dielectric materials

Methods and apparatus for electroless plating dispense

SAMSUNG ELECTRONICS CO LTD

Method and system for providing a reverse-engineering resistant hardware embedded security module

Generative structure-property inverse computational co-design of materials

Low resistivity interconnects with doped barrier layer for integrated circuits

Method of screening materials using forward conducting modes

Method and system for providing a reverse engineering resistant hardware embedded security module

LAVOIE ADRIEN R

Tunable gate electrode work function material for transistor applications

SIMKA HARSONO S

Liner layers for metal interconnects

DOMINGUEZ JUAN E

Surface charge enhanced atomic layer deposition of pure metallic films

ADVANCED TECH MATERIALS

Copper precursors for CVD/ALD/digital CVD of copper metal films