Inventor
NAGUMO TOSHIHARU
JP14 patents
⚠️ This page may combine multiple inventors who share the name “NAGUMO TOSHIHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
7 patentsUS9589951B2Mar 7, 2017
High-electron-mobility transistor with protective diode
RENESAS ELECTRONICS CORP2 citations73
US9231105B2Jan 5, 2016
Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistor
RENESAS ELECTRONICS CORP3 citations73
US9362308B2Jun 7, 2016
Semiconductor device having finFET structures and method of making same
RENESAS ELECTRONICS CORP3 citations71
US9196715B2Nov 24, 2015
Field effect transistor with channel core modified to reduce leakage current and method of fabrication
RENESAS ELECTRONICS CORP2 citations61
US9190505B2Nov 17, 2015
Field effect transistor with channel core modified for a backgate bias and method of fabrication
RENESAS ELECTRONICS CORP3 citations60
US10069010B2Sep 4, 2018
Semiconductor device having compressively strained channel region and method of making same
RENESAS ELECTRONICS CORP1 citations51
US9553131B2Jan 24, 2017
Semiconductor device and forming method
RENESAS ELECTRONICS CORP0 citations51