Inventor

SON JONG-PIL

KR48 patents

⚠️ This page may combine multiple inventors who share the name “SON JONG-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SON JONG-PIL

SAMSUNG ELECTRONICS CO LTD

Memory modules and memory systems

Semiconductor memory devices, memory systems including the same and methods of operating the same

Semiconductor memory devices, memory systems including the same and methods of operating the same

Memory device, memory module, and memory system

Memory device having error notification function

Method of operating a volatile memory device and a memory controller

Memory modules and memory systems

Memory device with relaxed timing parameter according to temperature, operating method thereof, and memory controller and memory system using the memory device

Memory device for reducing a write fail, a system including the same, and a method thereof

Memory devices with selective error correction code

Semiconductor memory device

Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices

Semiconductor memory device and a chip stack package having the same

Memory device, memory module, and memory system

Memory device for performing error correction code operation and redundancy repair operation

Method of operating memory device and methods of writing and reading data in memory device

Repair control circuit and semiconductor memory device including the same

Dynamic random access memory devices and memory systems having the same

Dynamic random access memory devices and memory systems having the same

Memory device

Profiling method of address access count of semiconductor device and profiling circuit using the same

Voltage divider and internal supply voltage generation circuit including the same

Integrated circuit device and high bandwidth memory device

Method and apparatus for managing memory

Semiconductor memory devices, memory systems including the same and method of correcting errors in the same

Method of use time management for semiconductor device and semiconductor device including use time managing circuit

Semiconductor memory device having a peripheral region including operating capacitors

Memory device selecting different column selection lines based on different offset values and memory system including the same

Memory device including error detection circuit

Semiconductor memory device and memory system including the same

Word-line timing control in a semiconductor memory device and a memory system including the same

SON JONG-PIL

Memory device

Memory cell, methods of manufacturing memory cell, and memory device having the same

Anti-fuse circuit using MTJ breakdown and semiconductor device including same

Semiconductor memory device having a hierarchical bit line scheme

Memory device including repair circuit and repair method thereof

Anti-fuse, anti-fuse circuit including the same, and method of fabricating the anti-fuse

Semiconductor device including fuse array and method of operation the same

Non-volatile semiconductor memory device

Fuse circuit, fuse array, semiconductor memory device and method of manufacturing semiconductor device

SAMSUNG ELECTRONICS LTD

Memory device for performing error correction code operation and redundancy repair operation

YU HAK-SOO

Bad page management in memory device or system

SON JONG PIL

Memory device capable of quickly repairing fail cell

KIM SANG-YUN

Volatile memory device and a memory controller

CHA SANG-UHN

Semiconductor memory devices, memory systems including the same and method of correcting errors in the same

PARK JU-SEOP

Method of selecting anti-fuses and method of monitoring anti-fuses

KIM JIN-HO

Fuse circuit and semiconductor memory device including the same

LEE CHEON AN

Circuit precharging DRAM bit line