Inventor
YE TIANCHUN
CN15 patents
⚠️ This page may combine multiple inventors who share the name “YE TIANCHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INST OF MICROELECTRONICS CAS
14 patentsUS10644020B2May 5, 2020
Three-dimensional semiconductor memory device with a substrate contact region and method of manufacturing the same
INST OF MICROELECTRONICS CAS6 citations72
US10483279B2Nov 19, 2019
Method of manufacturing a semiconductor device
INST OF MICROELECTRONICS CAS2 citations71
US11839085B2Dec 5, 2023
Three-dimensional vertical single transistor ferroelectric memory and manufacturing method thereof
INST OF MICROELECTRONICS CAS5 citations67
US11929304B2Mar 12, 2024
Semiconductor apparatus with heat dissipation conduit in sidewall interconnection structure, method of manufacturing the same, and electronic device
INST OF MICROELECTRONICS CAS0 citations62
US10504916B2Dec 10, 2019
Semiconductor device and method of manufacturing the same
INST OF MICROELECTRONICS CAS1 citations62
US9196706B2Nov 24, 2015
Method for manufacturing P-type MOSFET
INST OF MICROELECTRONICS CAS2 citations62
US11056580B2Jul 6, 2021
Semiconductor device and manufacturing method thereof
INST OF MICROELECTRONICS CAS1 citations60
US12197282B2Jan 14, 2025
Data recovery method for flash memory
INST OF MICROELECTRONICS CAS0 citations58
US11069808B2Jul 20, 2021
Negative capacitance field effect transistor and method for manufacturing the same
INST OF MICROELECTRONICS CAS0 citations57
US10991877B2Apr 27, 2021
Multi-state memory and method for manufacturing the same
INST OF MICROELECTRONICS CAS0 citations49
US12088323B2Sep 10, 2024
Read-write method and apparatus for LEPS soft decoding estimation, and electronic device
INST OF MICROELECTRONICS CAS0 citations48
US11411091B2Aug 9, 2022
Structure of stacked gate-all-around nano-sheet CMOS device and method for manufacturing the same
INST OF MICROELECTRONICS CAS0 citations47
US11594608B2Feb 28, 2023
Method for forming gate-all-around nanowire device
INST OF MICROELECTRONICS CAS0 citations45
US9111995B2Aug 18, 2015
Method for improving anti-radiation performance of SOI structure
INST OF MICROELECTRONICS CAS0 citations42