Inventor
SAMANTA GAURAB
US19 patents
⚠️ This page may combine multiple inventors who share the name “SAMANTA GAURAB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALWAFERS CO LTD
14 patentsUS11136691B2Oct 5, 2021
Systems and methods for production of low oxygen content silicon
GLOBALWAFERS CO LTD5 citations82
US10745823B2Aug 18, 2020
Systems and methods for production of low oxygen content silicon
GLOBALWAFERS CO LTD6 citations82
US12037699B2Jul 16, 2024
Systems for production of low oxygen content silicon
GLOBALWAFERS CO LTD2 citations71
US11668020B2Jun 6, 2023
Systems and methods for production of low oxygen content silicon
GLOBALWAFERS CO LTD3 citations71
US10818540B2Oct 27, 2020
Method for transfer of a thin layer of silicon
GLOBALWAFERS CO LTD2 citations71
US12247314B2Mar 11, 2025
Systems for production of low oxygen content silicon
GLOBALWAFERS CO LTD0 citations61
US12183625B2Dec 31, 2024
Method for transfer of a thin layer of silicon
GLOBALWAFERS CO LTD0 citations61
US11443978B2Sep 13, 2022
Method for transfer of a thin layer of silicon
GLOBALWAFERS CO LTD0 citations61
US10513796B2Dec 24, 2019
Methods for producing low oxygen silicon ingots
GLOBALWAFERS CO LTD1 citations61
US12398487B2Aug 26, 2025
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
GLOBALWAFERS CO LTD0 citations60
US11753741B2Sep 12, 2023
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
GLOBALWAFERS CO LTD0 citations60
US11313049B2Apr 26, 2022
Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
GLOBALWAFERS CO LTD1 citations59
US11072870B2Jul 27, 2021
Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
GLOBALWAFERS CO LTD0 citations59
US10557213B2Feb 11, 2020
Crystal growing systems and methods including a transparent crucible
GLOBALWAFERS CO LTD0 citations51
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
4 patentsUS10487418B2Nov 26, 2019
Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process
SUNEDISON SEMICONDUCTOR LTD UEN201334164H3 citations72
US10066314B2Sep 4, 2018
Crystal growing systems and methods including a transparent crucible
SUNEDISON SEMICONDUCTOR LTD UEN201334164H2 citations72
US11111602B2Sep 7, 2021
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
SUNEDISON SEMICONDUCTOR LTD UEN201334164H2 citations70
US10988859B2Apr 27, 2021
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
SUNEDISON SEMICONDUCTOR LTD UEN201334164H0 citations60