Inventor
LU TSE-WEI
TW4 patents
⚠️ This page may combine multiple inventors who share the name “LU TSE-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
2 patentsUS11111602B2Sep 7, 2021
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
SUNEDISON SEMICONDUCTOR LTD UEN201334164H2 citations70
US10988859B2Apr 27, 2021
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
SUNEDISON SEMICONDUCTOR LTD UEN201334164H0 citations60
GLOBALWAFERS CO LTD
2 patentsUS12398487B2Aug 26, 2025
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
GLOBALWAFERS CO LTD0 citations60
US11753741B2Sep 12, 2023
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
GLOBALWAFERS CO LTD0 citations60