Inventor

KUROYANAGI AKIRA

JP43 patents

⚠️ This page may combine multiple inventors who share the name “KUROYANAGI AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUROYANAGI AKIRA

NIPPON DENSO CO

Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen

Vertical semiconductor device with ground surface providing a reduced ON resistance

Semiconductor device and method of manufacturing same

EEPROM semiconductor memory device

Method of fabricating a semiconductor pressure sensor

Method of manufacturing a floating gate memory device

Semiconductor device with current detecting function and method of producing the same

Method of producing semiconductor device with current detecting function

Vertical type semiconductor device and method for producing the same

Vertical type semiconductor with main current section and emulation current section

Method of forming a sidewall on a semiconductor element

Vertical type semiconductor device and gate structure

Method for producing semiconductor device having DMOS and NMOS elements formed in the same substrate

Manufacturing method for semiconductor device

Method of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistance

Semiconductor memory device of a floating gate tunnel oxide type

Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries

Method of manufacturing a vertical semiconductor device

Semiconductor memory device and method of manufacturing the same

Method of producing a semiconductor device having accurate current detection

DENSO CORP

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device and method for manufacturing the same

Method of forming silicon nitride with varied hydrogen concentration

Power semiconductor device

Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode

Trench-gate transistor with ono gate dielectric and fabrication process therefor

Semiconductor device and method for manufacturing the same

Semiconductor device employing silicon nitride layers with varied hydrogen concentration

Method of manufacturing a vertical semiconductor device

Semiconductor memory device and method of manufacturing the same

Fuel pump and motor device for the same

Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate

Change-over device for changing over between a heating medium and a resin material at a time of a secondary forming

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

Heated medium supplying method and structure for secondary molding of resin molded component

Method of manufacturing resin molding and change-over device for changing over between heating medium and resin material in process of secondary forming

TOYOTA MOTOR CO LTD

Insulated gate semiconductor device

Insulated gate type semiconductor device and manufacturing method thereof

TAKAYA HIDEFUMI

Insulated gate semiconductor device and method for producing the same

NIPPONDENSO CORP

Semiconductor memory device and method of manufacturing the same

MOROTO KIYONORI

Method for manufacturing motor device for a fuel pump