Inventor
PATTANAYAK DEVA N
US25 patents
⚠️ This page may combine multiple inventors who share the name “PATTANAYAK DEVA N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VISHAY SILICONIX
8 patentsUS7833863B1Nov 16, 2010
Method of manufacturing a closed cell trench MOSFET
VISHAY SILICONIX20 citations92
US7361558B2Apr 22, 2008
Method of manufacturing a closed cell trench MOSFET
VISHAY SILICONIX19 citations92
US7279743B2Oct 9, 2007
Closed cell trench metal-oxide-semiconductor field effect transistor
VISHAY SILICONIX24 citations92
US8368126B2Feb 5, 2013
Trench metal oxide semiconductor with recessed trench material and remote contacts
VISHAY SILICONIX11 citations82
US9853140B2Dec 26, 2017
Adaptive charge balanced MOSFET techniques
VISHAY SILICONIX4 citations73
US10229988B2Mar 12, 2019
Adaptive charge balanced edge termination
VISHAY SILICONIX1 citations62
US10546750B2Jan 28, 2020
System and method for substrate wafer back side and edge cross section seals
VISHAY SILICONIX0 citations51
US8883580B2Nov 11, 2014
Trench metal oxide semiconductor with recessed trench material and remote contacts
VISHAY SILICONIX1 citations50
SILICONIX INC
7 patentsUS7183610B2Feb 27, 2007
Super trench MOSFET including buried source electrode and method of fabricating the same
SILICONIX INC118 citations98
US7557409B2Jul 7, 2009
Super trench MOSFET including buried source electrode
SILICONIX INC26 citations92
US6903412B2Jun 7, 2005
Trench MIS device with graduated gate oxide layer
SILICONIX INC21 citations92
US6875657B2Apr 5, 2005
Method of fabricating trench MIS device with graduated gate oxide layer
SILICONIX INC17 citations92
US6913977B2Jul 5, 2005
Triple-diffused trench MOSFET and method of fabricating the same
SILICONIX INC13 citations84
US7233043B2Jun 19, 2007
Triple-diffused trench MOSFET
SILICONIX INC2 citations63
US7704836B2Apr 27, 2010
Method of fabricating super trench MOSFET including buried source electrode
SILICONIX INC4 citations62
GEN ELECTRIC
7 patentsUS4963951AOct 16, 1990
Lateral insulated gate bipolar transistors with improved latch-up immunity
GEN ELECTRIC100 citations96
US4912541AMar 27, 1990
Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication
GEN ELECTRIC28 citations92
US4888627ADec 19, 1989
Monolithically integrated lateral insulated gate semiconductor device
GEN ELECTRIC30 citations92
US4857983AAug 15, 1989
Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
GEN ELECTRIC33 citations92
US4847671AJul 11, 1989
Monolithically integrated insulated gate semiconductor device
GEN ELECTRIC30 citations92
US4980740ADec 25, 1990
MOS-pilot structure for an insulated gate transistor
GEN ELECTRIC11 citations74
US4801985AJan 31, 1989
Monolithically integrated semiconductor device and process for fabrication
GEN ELECTRIC3 citations63