Inventor
KITADA MIZUE
JP29 patents
Patents
29 patentsUS6573559B2Jun 3, 2003
Transistor and method of manufacturing the same
SHINDENGEN ELECTRIC MFG47 citations95
US6404032B1Jun 11, 2002
Semiconductor device
SHINDENGEN ELECTRIC MFG42 citations92
US6841825B2Jan 11, 2005
Semiconductor device
SHINDENGEN ELECTRIC MFG20 citations91
US6768138B1Jul 27, 2004
Diode element
SHINDENGEN ELECTRIC MFG26 citations89
US6706615B2Mar 16, 2004
Method of manufacturing a transistor
SHINDENGEN ELECTRIC MFG15 citations83
US10439056B2Oct 8, 2019
Power semiconductor device and method of manufacturing power semiconductor device
SHINDENGEN ELECTRIC MFG4 citations73
US6906355B2Jun 14, 2005
Semiconductor device
SHINDENGEN ELECTRIC MFG11 citations72
US11843048B2Dec 12, 2023
Method of manufacturing MOSFET having a semiconductor base substrate with a super junction structure
SHINDENGEN ELECTRIC MFG0 citations62
US11342452B2May 24, 2022
MOSFET, having a semiconductor base substrate with a super junction structure, method of manufacturing the MOSFET, and power conversion circuit having the MOSFET
SHINDENGEN ELECTRIC MFG0 citations62
US10818496B2Oct 27, 2020
Semiconductor device having crystal defects and method of manufacturing the semiconductor device having crystal defects
SHINDENGEN ELECTRIC MFG1 citations62
US10468480B1Nov 5, 2019
MOSFET and power conversion circuit
SHINDENGEN ELECTRIC MFG1 citations62
US7365391B2Apr 29, 2008
Semiconductor device and method for manufacturing thereof
SHINDENGEN ELECTRIC MFG2 citations61
US7196376B2Mar 27, 2007
Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltage
SHINDENGEN ELECTRIC MFG3 citations61
US6876034B2Apr 5, 2005
Semiconductor device having active grooves
SHINDENGEN ELECTRIC MFG2 citations61
US7230298B2Jun 12, 2007
Transistor having narrow trench filled with epitaxially-grown filling material free of voids
SHINDENGEN ELECTRIC MFG2 citations60
US7135718B2Nov 14, 2006
Diode device and transistor device
SHINDENGEN ELECTRIC MFG3 citations60
US7208375B2Apr 24, 2007
Semiconductor device
SHINDENGEN ELECTRIC MFG0 citations51
US11005354B2May 11, 2021
Power conversion circuit
SHINDENGEN ELECTRIC MFG0 citations50
US7855413B2Dec 21, 2010
Diode with low resistance and high breakdown voltage
SHINDENGEN ELECTRIC MFG0 citations49
US11626479B2Apr 11, 2023
Semiconductor device and method of manufacturing semiconductor device
SHINDENGEN ELECTRIC MFG0 citations44
US10872952B1Dec 22, 2020
MOSFET and power conversion circuit
SHINDENGEN ELECTRIC MFG0 citations42
US10468518B2Nov 5, 2019
Power semiconductor device having a first and a second conductive-type columnar regions formed alternately with each other and method of manufacturing the power semiconductor device
SHINDENGEN ELECTRIC MFG0 citations42
US10411141B2Sep 10, 2019
Semiconductor device and method of manufacturing semiconductor device
SHINDENGEN ELECTRIC MFG0 citations42
US10290734B2May 14, 2019
MOSFET and power conversion circuit
SHINDENGEN ELECTRIC MFG0 citations42
US9859414B2Jan 2, 2018
Semiconductor device
SHINDENGEN ELECTRIC MFG0 citations41
US10700191B2Jun 30, 2020
MOSFET and power conversion circuit
SHINDENGEN ELECTRIC MFG0 citations40
US10475917B2Nov 12, 2019
Mosfet
SHINDENGEN ELECTRIC MFG0 citations40
US7573109B2Aug 11, 2009
Semiconductor device
SHINDENGEN ELECTRIC MFG0 citations37
US7282764B2Oct 16, 2007
Semiconductor device
SHINDENGEN ELECTRIC MFG0 citations37