Inventor
SHIH CHENG-YEH
TW21 patents
⚠️ This page may combine multiple inventors who share the name “SHIH CHENG-YEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
20 patentsUS6100118AAug 8, 2000
Fabrication of metal fuse design for redundancy technology having a guard ring
TAIWAN SEMICONDUCTOR MFG116 citations98
US6080637AJun 27, 2000
Shallow trench isolation technology to eliminate a kink effect
TAIWAN SEMICONDUCTOR MFG88 citations98
US6100116AAug 8, 2000
Method to form a protected metal fuse
TAIWAN SEMICONDUCTOR MFG51 citations93
US6307213B1Oct 23, 2001
Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TAIWAN SEMICONDUCTOR MFG31 citations92
US6143617ANov 7, 2000
Composite capacitor electrode for a DRAM cell
TAIWAN SEMICONDUCTOR MFG26 citations92
US6121073ASep 19, 2000
Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TAIWAN SEMICONDUCTOR MFG40 citations92
US6037213AMar 14, 2000
Method for making cylinder-shaped capacitors for dynamic random access memory
TAIWAN SEMICONDUCTOR MFG55 citations92
US5521119AMay 28, 1996
Post treatment of tungsten etching back
TAIWAN SEMICONDUCTOR MFG29 citations92
US6268281B1Jul 31, 2001
Method to form self-aligned contacts with polysilicon plugs
TAIWAN SEMICONDUCTOR MFG18 citations84
US6204134B1Mar 20, 2001
Method for fabricating a self aligned contact plug
TAIWAN SEMICONDUCTOR MFG16 citations84
US6825520B1Nov 30, 2004
Capacitor with a roughened silicide layer
TAIWAN SEMICONDUCTOR MFG8 citations74
US6348409B1Feb 19, 2002
Self aligned contact plug technology
TAIWAN SEMICONDUCTOR MFG11 citations74
US6078087AJun 20, 2000
SRAM memory device with improved performance
TAIWAN SEMICONDUCTOR MFG6 citations74
US6054368AApr 25, 2000
Method of making an improved field oxide isolation structure for semiconductor integrated circuits having higher field oxide threshold voltages
TAIWAN SEMICONDUCTOR MFG8 citations74
US5953606ASep 14, 1999
Method for manufacturing a TFT SRAM memory device with improved performance
TAIWAN SEMICONDUCTOR MFG7 citations74
US5834346ANov 10, 1998
Procedure for eliminating bubbles formed during reflow of a dielectric layer over an LDD structure
TAIWAN SEMICONDUCTOR MFG12 citations73
US5707895AJan 13, 1998
Thin film transistor performance enhancement by water plasma treatment
TAIWAN SEMICONDUCTOR MFG13 citations73
US5943569AAug 24, 1999
Method for making improved capacitors on dynamic random access memory having increased capacitance, longer refresh times, and improved yields
TAIWAN SEMICONDUCTOR MFG9 citations70
US6479402B1Nov 12, 2002
Method to improve adhesion of molding compound by providing an oxygen rich film over the top surface of a passivation layer
TAIWAN SEMICONDUCTOR MFG10 citations68
US6670690B1Dec 30, 2003
Method of making an improved field oxide isolation structure for semiconductor integrated circuits having higher field oxide threshold voltages
TAIWAN SEMICONDUCTOR MFG3 citations63