Inventor
YEH CHIH CHIEH
TW224 patents
⚠️ This page may combine multiple inventors who share the name “YEH CHIH CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS10290546B2May 14, 2019
Threshold voltage adjustment for a gate-all-around semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD131 citations99
US9853101B2Dec 26, 2017
Strained nanowire CMOS device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD151 citations99
US9564489B2Feb 7, 2017
Multiple gate field-effect transistors having oxygen-scavenged gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD297 citations99
US9660033B1May 23, 2017
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD58 citations98
US9583399B1Feb 28, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD50 citations98
US10374059B2Aug 6, 2019
Structure and formation method of semiconductor device structure with nanowires
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10134640B1Nov 20, 2018
Semiconductor device structure with semiconductor wire
TAIWAN SEMICONDUCTOR MFG CO LTD42 citations94
US9627540B1Apr 18, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US10037912B2Jul 31, 2018
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations93
US10297508B2May 21, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US11056400B2Jul 6, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10867841B2Dec 15, 2020
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10727298B2Jul 28, 2020
Strained nanowire CMOS device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10672667B2Jun 2, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10522409B2Dec 31, 2019
Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10522625B2Dec 31, 2019
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10134843B2Nov 20, 2018
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10062782B2Aug 28, 2018
Method of manufacturing a semiconductor device with multilayered channel structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10002969B2Jun 19, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
MACRONIX INT CO LTD
18 patentsUS6690601B2Feb 10, 2004
Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same
MACRONIX INT CO LTD162 citations99
US7158411B2Jan 2, 2007
Integrated code and data flash memory
MACRONIX INT CO LTD116 citations98
US6657894B2Dec 2, 2003
Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells
MACRONIX INT CO LTD108 citations98
US7209386B2Apr 24, 2007
Charge trapping non-volatile memory and method for gate-by-gate erase for same
MACRONIX INT CO LTD57 citations96
US7170785B2Jan 30, 2007
Method and apparatus for operating a string of charge trapping memory cells
MACRONIX INT CO LTD50 citations96
US6996011B2Feb 7, 2006
NAND-type non-volatile memory cell and method for operating same
MACRONIX INT CO LTD62 citations96
US6958934B2Oct 25, 2005
Method of programming and erasing multi-level flash memory
MACRONIX INT CO LTD43 citations96
US6829175B2Dec 7, 2004
Erasing method for non-volatile memory
MACRONIX INT CO LTD47 citations96
US6721204B1Apr 13, 2004
Memory erase method and device with optimal data retention for nonvolatile memory
MACRONIX INT CO LTD66 citations96
US6646924B1Nov 11, 2003
Non-volatile memory and operating method thereof
MACRONIX INT CO LTD64 citations96
US6614694B1Sep 2, 2003
Erase scheme for non-volatile memory
MACRONIX INT CO LTD67 citations96
US7120059B2Oct 10, 2006
Memory array including multiple-gate charge trapping non-volatile cells
MACRONIX INT CO LTD53 citations93
US7072219B1Jul 4, 2006
Method and apparatus for operating a non-volatile memory array
MACRONIX INT CO LTD21 citations93
US7035147B2Apr 25, 2006
Overerase protection of memory cells for nonvolatile memory
MACRONIX INT CO LTD22 citations93
US7272043B2Sep 18, 2007
Operation methods for a non-volatile memory cell in an array
MACRONIX INT CO LTD24 citations92
US7180123B2Feb 20, 2007
Method for programming programmable eraseless memory
MACRONIX INT CO LTD19 citations92
US7133317B2Nov 7, 2006
Method and apparatus for programming nonvolatile memory
MACRONIX INT CO LTD28 citations92
US6785163B2Aug 31, 2004
Trim circuit and method for tuning a current level of a reference cell in a flash memory
MACRONIX INT CO LTD19 citations92
LEE TSUNG-LIN
4 patentsUS9171929B2Oct 27, 2015
Strained structure of semiconductor device and method of making the strained structure
LEE TSUNG-LIN593 citations99
US8847293B2Sep 30, 2014
Gate structure for semiconductor device
LEE TSUNG-LIN518 citations99
US8941153B2Jan 27, 2015
FinFETs with different fin heights
LEE TSUNG-LIN46 citations98
US8445340B2May 21, 2013
Sacrificial offset protection film for a FinFET device
LEE TSUNG-LIN21 citations93
TAIWAN SEMICONDUCTOR MFG
3 patentsYEH CHIH CHIEH
2 patentsPERNG TSU-HSIU
1 patentCHANG CHIH-HAO
1 patentLAI LI-SHYUE
1 patentMACRONIX INTERNAT CO TD
1 patentShowing the top 50 of 224 patents by PatentIndex Score.