P

Inventor

YEH CHIH CHIEH

TW224 patents
⚠️ This page may combine multiple inventors who share the name “YEH CHIH CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US10290546B2May 14, 2019

Threshold voltage adjustment for a gate-all-around semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD131 citations99
US9853101B2Dec 26, 2017

Strained nanowire CMOS device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD151 citations99
US9564489B2Feb 7, 2017

Multiple gate field-effect transistors having oxygen-scavenged gate stack

TAIWAN SEMICONDUCTOR MFG CO LTD297 citations99
US9660033B1May 23, 2017

Multi-gate device and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD58 citations98
US9583399B1Feb 28, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD50 citations98
US10374059B2Aug 6, 2019

Structure and formation method of semiconductor device structure with nanowires

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10134640B1Nov 20, 2018

Semiconductor device structure with semiconductor wire

TAIWAN SEMICONDUCTOR MFG CO LTD42 citations94
US9627540B1Apr 18, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US10037912B2Jul 31, 2018

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations93
US10297508B2May 21, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US11056400B2Jul 6, 2021

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10867841B2Dec 15, 2020

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10727298B2Jul 28, 2020

Strained nanowire CMOS device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10672667B2Jun 2, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10522409B2Dec 31, 2019

Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10522625B2Dec 31, 2019

Multi-gate device and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10134843B2Nov 20, 2018

Multi-gate device and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10062782B2Aug 28, 2018

Method of manufacturing a semiconductor device with multilayered channel structure

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10002969B2Jun 19, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84

MACRONIX INT CO LTD

18 patents
US6690601B2Feb 10, 2004

Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same

MACRONIX INT CO LTD162 citations99
US7158411B2Jan 2, 2007

Integrated code and data flash memory

MACRONIX INT CO LTD116 citations98
US6657894B2Dec 2, 2003

Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells

MACRONIX INT CO LTD108 citations98
US7209386B2Apr 24, 2007

Charge trapping non-volatile memory and method for gate-by-gate erase for same

MACRONIX INT CO LTD57 citations96
US7170785B2Jan 30, 2007

Method and apparatus for operating a string of charge trapping memory cells

MACRONIX INT CO LTD50 citations96
US6996011B2Feb 7, 2006

NAND-type non-volatile memory cell and method for operating same

MACRONIX INT CO LTD62 citations96
US6958934B2Oct 25, 2005

Method of programming and erasing multi-level flash memory

MACRONIX INT CO LTD43 citations96
US6829175B2Dec 7, 2004

Erasing method for non-volatile memory

MACRONIX INT CO LTD47 citations96
US6721204B1Apr 13, 2004

Memory erase method and device with optimal data retention for nonvolatile memory

MACRONIX INT CO LTD66 citations96
US6646924B1Nov 11, 2003

Non-volatile memory and operating method thereof

MACRONIX INT CO LTD64 citations96
US6614694B1Sep 2, 2003

Erase scheme for non-volatile memory

MACRONIX INT CO LTD67 citations96
US7120059B2Oct 10, 2006

Memory array including multiple-gate charge trapping non-volatile cells

MACRONIX INT CO LTD53 citations93
US7072219B1Jul 4, 2006

Method and apparatus for operating a non-volatile memory array

MACRONIX INT CO LTD21 citations93
US7035147B2Apr 25, 2006

Overerase protection of memory cells for nonvolatile memory

MACRONIX INT CO LTD22 citations93
US7272043B2Sep 18, 2007

Operation methods for a non-volatile memory cell in an array

MACRONIX INT CO LTD24 citations92
US7180123B2Feb 20, 2007

Method for programming programmable eraseless memory

MACRONIX INT CO LTD19 citations92
US7133317B2Nov 7, 2006

Method and apparatus for programming nonvolatile memory

MACRONIX INT CO LTD28 citations92
US6785163B2Aug 31, 2004

Trim circuit and method for tuning a current level of a reference cell in a flash memory

MACRONIX INT CO LTD19 citations92

LEE TSUNG-LIN

4 patents

TAIWAN SEMICONDUCTOR MFG

3 patents

YEH CHIH CHIEH

2 patents

PERNG TSU-HSIU

1 patent

CHANG CHIH-HAO

1 patent

LAI LI-SHYUE

1 patent

MACRONIX INTERNAT CO TD

1 patent

Showing the top 50 of 224 patents by PatentIndex Score.