Inventor
MOSELY RODERICK C
US29 patents
⚠️ This page may combine multiple inventors who share the name “MOSELY RODERICK C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
17 patentsUS6607976B2Aug 19, 2003
Copper interconnect barrier layer structure and formation method
APPLIED MATERIALS INC289 citations99
US7604708B2Oct 20, 2009
Cleaning of native oxide with hydrogen-containing radicals
APPLIED MATERIALS INC226 citations97
US7048837B2May 23, 2006
End point detection for sputtering and resputtering
APPLIED MATERIALS INC68 citations97
US5989999ANov 23, 1999
Construction of a tantalum nitride film on a semiconductor wafer
APPLIED MATERIALS INC100 citations97
US6500742B1Dec 31, 2002
Construction of a film on a semiconductor wafer
APPLIED MATERIALS INC36 citations96
US6120844ASep 19, 2000
Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer
APPLIED MATERIALS INC57 citations96
US6071572AJun 6, 2000
Forming tin thin films using remote activated specie generation
APPLIED MATERIALS INC467 citations96
US6066358AMay 23, 2000
Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
APPLIED MATERIALS INC62 citations96
US5431799AJul 11, 1995
Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
APPLIED MATERIALS INC105 citations96
US6458684B1Oct 1, 2002
Single step process for blanket-selective CVD aluminum deposition
APPLIED MATERIALS INC42 citations93
US5943600AAug 24, 1999
Treatment of a titanium nitride layer to improve resistance to elevated temperatures
APPLIED MATERIALS INC40 citations93
US6077781AJun 20, 2000
Single step process for blanket-selective CVD aluminum deposition
APPLIED MATERIALS INC12 citations74
US10047430B2Aug 14, 2018
Self-ionized and inductively-coupled plasma for sputtering and resputtering
APPLIED MATERIALS INC5 citations73
US6444036B2Sep 3, 2002
Construction of a film on a semiconductor wafer
APPLIED MATERIALS INC13 citations73
US6251758B1Jun 26, 2001
Construction of a film on a semiconductor wafer
APPLIED MATERIALS INC11 citations73
US6509274B1Jan 21, 2003
Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate
APPLIED MATERIALS INC11 citations72
US6933021B2Aug 23, 2005
Method of TiSiN deposition using a chemical vapor deposition (CVD) process
APPLIED MATERIALS INC11 citations69
JENNINGS TECHNOLOGY
3 patentsUS7383733B2Jun 10, 2008
Method and apparatus for the sonic detection of high pressure conditions in a vacuum switching device
JENNINGS TECHNOLOGY5 citations57
US7313964B2Jan 1, 2008
Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device
JENNINGS TECHNOLOGY4 citations57
US7302854B2Dec 4, 2007
Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device
JENNINGS TECHNOLOGY4 citations55
(unassigned)
2 patentsMACHINE TECHNOLOGY INC
2 patentsDING PEIJUN
2 patentsTHOMAS AND BETTS INTERNATIONAL
2 patentsUS7497122B2Mar 3, 2009
Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device
THOMAS AND BETTS INTERNATIONAL7 citations67
US7802480B2Sep 28, 2010
Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical device
THOMAS AND BETTS INTERNATIONAL6 citations60